Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers

1989 ◽  
Vol 1 (8) ◽  
pp. 205-208 ◽  
Author(s):  
D. Botez ◽  
L.M. Zinkiewicz ◽  
T.J. Roth ◽  
L.J. Mawst ◽  
G. Peterson
Keyword(s):  
Current Density ◽  
Diode Lasers ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Vertical Cavity

Design Consideration of GaN-Based Surface Emitting Lasers

1996 ◽  
Vol 449 ◽  
Author(s):  
T. Honda ◽  
F. Koyama ◽  
K. Iga
Keyword(s):  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Design Consideration ◽  
Micro Fabrication ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Emitting Lasers ◽  
Vertical Cavity

ABSTRACTThe threshold current density of GaN-based vertical cavity surface emitting lasers (VCSELs) has been estimated. It is clarified that the introduction of a quantum well structure as an active layer is very effective for a low threshold operation and that high reflective mirrors are required for low threshold GaN-based VCSELs. Also, attempts on micro-fabrication process of GaN is presented.

scholarly journals Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 187 ◽  
Author(s):  
Chih-Chiang Shen ◽  
Yun-Ting Lu ◽  
Yen-Wei Yeh ◽  
Cheng-Yuan Chen ◽  
Yu-Tzu Chen ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Indium Tin Oxide ◽  
Optical Loss ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Output Performance ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

Single-transverse mode, low threshold current vertical-cavity surface-emitting laser

1993 ◽  
Vol 40 (11) ◽  
pp. 2116-2117 ◽  
Author(s):  
Y.A. Wu ◽  
C.J. Chang-Hasnain ◽  
G.S. Li ◽  
R. Nabiev ◽  
C. Caneau ◽  
...  
Keyword(s):  
Transverse Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity

Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure

1996 ◽  
Author(s):  
Zhongqi Pan ◽  
Yongzhen Huang ◽  
Rong Han Wu ◽  
Zengqi Zhou ◽  
Yaowang Ling ◽  
...  
Keyword(s):  
Threshold Current ◽  
Cavity Surface ◽  
Mesa Structure ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity
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