Optimal cavity design for low‐threshold‐current‐density operation of double‐heterojunction diode lasers

1979 ◽  
Vol 35 (1) ◽  
pp. 57-60 ◽  
Author(s):  
Dan Botez
Keyword(s):  
Current Density ◽  
Diode Lasers ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Heterojunction Diode ◽  
Double Heterojunction ◽  
Cavity Design ◽  
Low Threshold

Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers

1989 ◽  
Vol 1 (8) ◽  
pp. 205-208 ◽  
Author(s):  
D. Botez ◽  
L.M. Zinkiewicz ◽  
T.J. Roth ◽  
L.J. Mawst ◽  
G. Peterson
Keyword(s):  
Current Density ◽  
Diode Lasers ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Vertical Cavity

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold

Sb-Based Mid-Infrared Diode Lasers

2001 ◽  
Vol 692 ◽  
Author(s):  
C. Mermelstein ◽  
M. Rattunde ◽  
J. Schmitz ◽  
S. Simanowski ◽  
R. Kiefer ◽  
...  
Keyword(s):  
Current Density ◽  
Cavity Length ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Ridge Waveguide ◽  
Single Element ◽  
Type I ◽  
Waveguide Design

AbstractIn this paper we review recent progress achieved in our development of type-I GaInAsSb/AlGaAsSb quantum-well (QW) lasers with emission wavelength in the 1.74–2.34 μm range. Triple-QW (3-QW) and single-QW (SQW) diode lasers having broadened waveguide design emitting around 2.26 μm have been studied in particular. Comparing the two designs we have find that the threshold current density at infinite cavity length as well as the transparency current density scale with the number of QWs. Maximum cw operating temperature exceeding 50°C and 90°C has been obtained for ridge waveguide lasers emitting above and below 2 μm, respectively. Ridge waveguide diode lasers emitting at 1.94 μm exhibited internal quantum efficiencies in excess of 77%, internal losses of 6 cm−1, and threshold current density at infinite cavity length as low as 121 A/cm2 reflecting the superior quality of our diode lasers, all values recorded at 280 K. A high characteristic temperature TOof 179 K for the threshold current along with a value of T1 = 433 K for the characteristic temperature of the external efficiency have been attained for the 240–280 K temperature interval. Room temperature cw output powers exceeding 1.7 W have been demonstrated for broad area single element devices with highreflection/ antireflection coated mirror facets, mounted epi-side down. The latter result is a proof for the high power capabilities of these GaSb-based mid-ir diode lasers.

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