Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure

1996 ◽  
Author(s):  
Zhongqi Pan ◽  
Yongzhen Huang ◽  
Rong Han Wu ◽  
Zengqi Zhou ◽  
Yaowang Ling ◽  
...  
Keyword(s):  
Threshold Current ◽  
Cavity Surface ◽  
Mesa Structure ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity

Single-transverse mode, low threshold current vertical-cavity surface-emitting laser

1993 ◽  
Vol 40 (11) ◽  
pp. 2116-2117 ◽  
Author(s):  
Y.A. Wu ◽  
C.J. Chang-Hasnain ◽  
G.S. Li ◽  
R. Nabiev ◽  
C. Caneau ◽  
...  
Keyword(s):  
Transverse Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity

scholarly journals Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 187 ◽  
Author(s):  
Chih-Chiang Shen ◽  
Yun-Ting Lu ◽  
Yen-Wei Yeh ◽  
Cheng-Yuan Chen ◽  
Yu-Tzu Chen ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Indium Tin Oxide ◽  
Optical Loss ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Output Performance ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers

1989 ◽  
Vol 1 (8) ◽  
pp. 205-208 ◽  
Author(s):  
D. Botez ◽  
L.M. Zinkiewicz ◽  
T.J. Roth ◽  
L.J. Mawst ◽  
G. Peterson
Keyword(s):  
Current Density ◽  
Diode Lasers ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Vertical Cavity
Sign in / Sign up

Export Citation Format

Share Document