Epitaxial lift-off GaAs/AlGaAs metal-semiconductor-metal photodetectors with back passivation

1993 ◽  
Vol 5 (10) ◽  
pp. 1210-1212 ◽  
Author(s):  
M.C. Hargis ◽  
R.E. Carnahan ◽  
J.S. Brown ◽  
N.M. Jokerst
Keyword(s):  
Metal Semiconductor Metal ◽  
Lift Off

Novel Metal-Semiconductor-Metal Photodetectors on Semi-Insulating Indium Phosphide

1996 ◽  
Vol 448 ◽  
Author(s):  
J.W. Palmer ◽  
W.A. Anderson
Keyword(s):  
Indium Tin Oxide ◽  
Dark Current ◽  
Antireflection Coating ◽  
Hole Trapping ◽  
Relative Transparency ◽  
Transit Times ◽  
Metal Semiconductor Metal ◽  
The Difference ◽  
Lift Off ◽  
Inp Substrates

AbstractDepositing Pd or Au on InP at substrate temperatures near 77K has previously been found to significantly reduce the interaction between the metal and semiconductor upon formation of the interface. In this work, this technique was used to fabricate metal-semiconductor-metal photodetectors (MSMPD’s) on semi-insulating (SI) InP substrates with superior characteristics compared to detectors formed using standard room temperature (RT) metal deposition. The low-temperature (LT) metallizations were patterned using a polyimide/SiO2 lift-off mask, and a SiO antireflection coating was used to attain near-zero reflection at λ=840nm. The detectors had an active area of 200μm × 200μm, and line widths and line spacings of 3μm. Detectors having a LT-Pd/SI-InP structure had a dark current of 80nA at 5V, which was a factor of 4 lower than the dark current of conventional MSMPD’s. Additionally, LT-Pd/SI-InP MSMPD’s exhibited excellent saturation characteristics and a responsivity of 0.75 A/W. Detectors with an indium-tin-oxide (ITO)/LT-Au(200Å)/SI-InP structure had a higher responsivity of 1.0 A/W, due to the relative transparency of this metallization. In contrast, MSMPD’s with RT metallizations had poor saturation characteristics, consistent with the results of others. The difference in the illuminated characteristics of MSMPD’s with RT and LT metallizations was due to a change in the internal photoconductive gain mechanism. In RT detectors, hole trapping at interface states near the cathode dominated the gain mechanism. In LT detectors, the difference in carrier transit-times dominated.

Integrated MSM-FET Photoreceiver Fabricated on Mocvd Grown Hg1-xCdxTe

1990 ◽  
Vol 216 ◽  
Author(s):  
Patrick W. Leech ◽  
Peter J. Gwynn ◽  
Geoffrey N. Pain ◽  
Novica R. Petkovic ◽  
James Thompson ◽  
...  
Keyword(s):  
Dark Current ◽  
Field Effect Transistor ◽  
Gaas Substrates ◽  
Integrated Devices ◽  
Metal Semiconductor Metal ◽  
Initial Work ◽  
Effect Transistor ◽  
Lift Off ◽  
Msm Photodetectors ◽  
Photoconductive Detector

ABSTRACTWe report on progress in the monolithic integration of a metal-semiconductor-metal (MSM) detector and transimpedence amplifier and of a photoconductive detector (PCD) with a metal-semiconductor field effect transistor (MESFET) in Hg1-xCdxTe. The layers of CdTe/n-type Hg1-xCdxTe were grown by MOCVD on semi-insulating GaAs substrates (2° misoriented 100). Fabrication of the devices was by an FET planar process; with a standard lift-off used to form Schottky metallization on both the interdigitated electrodes of the MSM detector (2μm width, 2μm spacing) and the gate of the MESFETs (5μm length, 100μm width). The MSM photodetectors exhibited breakdown voltages in the range 60 to 80V, a dark current of 1 Ona at 5V bias, and responsivities of > 1.0 A/W measured at 40V using CW 1.3um illumination. The integrated devices have been characterised by electrical and micro RBS techniques; the results were found to be strongly dependent on the stoichiometric x ratio of the Hg1-xCdxTe. This initial work demonstrates the suitability of Hg1-xCdxTe/GaAs structures in the fabrication of integrated optoelectronic circuits.

Dual solar satellites ready for lift-off

Nature ◽  
2006 ◽  
Author(s):  
Geoff Brumfiel
Keyword(s):  
Lift Off

Indian lift-off a let-down

Nature ◽  
2006 ◽  
Author(s):  
Killugudi Jayaraman
Keyword(s):  
Lift Off

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

Erratum: Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

1990 ◽  
Vol 26 (16) ◽  
pp. 1324
Author(s):  
I. Pollentier ◽  
L. Buydens ◽  
A. Ackaert ◽  
P. Demeester ◽  
P. van Daele ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Strained Layer ◽  
Gaas Mesfet ◽  
Lift Off

scholarly journals Research on Detection Mechanism of Weld Defects of Carbon Steel Plate Based on Orthogonal Axial Eddy Current Probe

Sensors ◽  
2020 ◽  
Vol 20 (19) ◽  
pp. 5515
Author(s):  
Linnan Huang ◽  
Chunhui Liao ◽  
Xiaochun Song ◽  
Tao Chen ◽  
Xu Zhang ◽  
...  
Keyword(s):  
Carbon Steel ◽  
Eddy Current ◽  
Steel Plate ◽  
Difficult Problem ◽  
Eddy Current Testing ◽  
Detection Sensitivity ◽  
Detection Mechanism ◽  
Current Testing ◽  
Weld Defects ◽  
Lift Off

The uneven surface of the weld seam makes eddy current testing more susceptible to the lift-off effect of the probe. Therefore, the defect of carbon steel plate welds has always been a difficult problem in eddy current testing. This study aimed to design a new type of eddy current orthogonal axial probe and establish the finite element simulation model of the probe. The effect of the probe structure, coil turns, and coil size on the detection sensitivity was simulated. Further, a designed orthogonal axial probe was used to conduct a systematic experiment on the weld of carbon steel specimens, and the 0.2 mm width and 1 mm depth of weld defects of carbon steel plates were effectively detected. The experimental results showed that the new orthogonal axial eddy current probe effectively suppressed the unevenness effect of the weld surface on the lift-off effect during the detection process.

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