Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells

1992 ◽  
Vol 4 (1) ◽  
pp. 10-13 ◽  
Author(s):  
J.S. Osinski ◽  
Y. Zou ◽  
P. Grodzinski ◽  
A. Mathur ◽  
P.D. Dapkus
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

2005 ◽  
Vol 475-479 ◽  
pp. 1663-1668 ◽  
Author(s):  
Rui-ying Zhang ◽  
Wei Wang ◽  
Fan Zhou ◽  
Jing Bian ◽  
Ling-juan Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multiple Quantum ◽  
Modulation Doping ◽  
Doping Effects ◽  
Low Threshold ◽  
Current Densities ◽  
First Time

1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.

Gas source MBE growth of 1.3μm-InAsP/InGaAsP quantum wells GRINSCH laser showing low threshold current density and high output power

1999 ◽  
Vol 201-202 ◽  
pp. 909-913 ◽  
Author(s):  
Hin Yiu Chung ◽  
Georgi Stareev ◽  
Jürgen Joos ◽  
Matthias Golling ◽  
Jürgen Mähnß ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
High Output Power ◽  
Mbe Growth ◽  
Gas Source ◽  
Low Threshold ◽  
Gas Source Mbe ◽  
High Output

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

2005 ◽  
pp. 1663-1668 ◽  
Author(s):  
Rui-ying Zhang ◽  
Wei Wang ◽  
Fan Zhou ◽  
Jing Bian ◽  
Ling-juan Zhao ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Modulation Doping ◽  
Low Threshold

Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers

1989 ◽  
Vol 1 (8) ◽  
pp. 205-208 ◽  
Author(s):  
D. Botez ◽  
L.M. Zinkiewicz ◽  
T.J. Roth ◽  
L.J. Mawst ◽  
G. Peterson
Keyword(s):  
Current Density ◽  
Diode Lasers ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Vertical Cavity
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