A high-density, matched hexagonal transistor structure in standard CMOS technology for high-speed applications

2000 ◽  
Vol 13 (2) ◽  
pp. 167-172 ◽  
Author(s):  
A. Van den Bosch ◽  
M.S.J. Steyaert ◽  
W. Sansen
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
High Density ◽  
Transistor Structure

scholarly journals A True Full-Duplex IO (TFD-IO) with Background SI cancellation for High-Density Interfaces

2021 ◽  
Author(s):  
Sandeep Goyal ◽  
Shalabh Gupta ◽  
Ganpat Anant Parulekar
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
High Density ◽  
The Self ◽  
Full Duplex ◽  
Density Interfaces

In this work, we have proposed and experimentally demonstrated a true full-duplex IO (TFD-IO) for high-speed high-density interfaces. The proposed TFD-IO can be used as an independent module that converts a unidirectional IO/interconnect to a fully bidirectional IO/interconnect, to ideally double the throughput of the high-speed interface. The TFD-IO uses a correlation-based technique to cancel the self-interference (SI) and echoes adaptively in the background. The signals transmitted from the near-end and the far-end can use independent baud nm CMOS technology, and demonstrated with bidirectional throughputs of up to 12.8 Gb/s.

scholarly journals A True Full-Duplex IO (TFD-IO) with Background SI Cancellation for High-Density Interfaces

2021 ◽  
Author(s):  
Sandeep Goyal ◽  
Ganpat Anant Parulekar ◽  
Shalabh Gupta
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
High Density ◽  
The Self ◽  
Full Duplex ◽  
Concept Design ◽  
Proof Of Concept ◽  
Density Interfaces

In this work, we have proposed and experimentally demonstrated a true full-duplex IO (TFD-IO) for high-speed high-density interfaces. The proposed TFD-IO can be used as an independent module that converts a unidirectional IO/interconnect to a fully bidirectional IO/interconnect, to ideally double the throughput of the high-speed interface. <br>The TFD-IO uses a correlation-based technique to cancel the self-interference (SI) adaptively in the background. The signals transmitted from the near-end and the far-end can use independent baud-rates and signaling schemes in a TFD-IO. A proof-of-concept design of the TFD-IO module has been fabricated in a 65 nm CMOS technology, and demonstrated with bidirectional throughputs of up to 12.8\,Gb/s.

C/sup 2/L: A new high-speed high-density bulk CMOS technology

1977 ◽  
Vol 12 (4) ◽  
pp. 344-349 ◽  
Author(s):  
A.G.F. Dingwall ◽  
R.E. Stricker
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
High Density

scholarly journals A True Full-Duplex IO (TFD-IO) with Background SI cancellation for High-Density Interfaces

2021 ◽  
Author(s):  
Sandeep Goyal ◽  
Shalabh Gupta ◽  
Ganpat Anant Parulekar
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
High Density ◽  
The Self ◽  
Full Duplex ◽  
Density Interfaces

In this work, we have proposed and experimentally demonstrated a true full-duplex IO (TFD-IO) for high-speed high-density interfaces. The proposed TFD-IO can be used as an independent module that converts a unidirectional IO/interconnect to a fully bidirectional IO/interconnect, to ideally double the throughput of the high-speed interface. The TFD-IO uses a correlation-based technique to cancel the self-interference (SI) and echoes adaptively in the background. The signals transmitted from the near-end and the far-end can use independent baud nm CMOS technology, and demonstrated with bidirectional throughputs of up to 12.8 Gb/s.

scholarly journals A True Full-Duplex IO (TFD-IO) with Background SI Cancellation for High-Density Interfaces

2021 ◽  
Author(s):  
Sandeep Goyal ◽  
Ganpat Anant Parulekar ◽  
Shalabh Gupta
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
High Density ◽  
The Self ◽  
Full Duplex ◽  
Concept Design ◽  
Proof Of Concept ◽  
Density Interfaces

In this work, we have proposed and experimentally demonstrated a true full-duplex IO (TFD-IO) for high-speed high-density interfaces. The proposed TFD-IO can be used as an independent module that converts a unidirectional IO/interconnect to a fully bidirectional IO/interconnect, to ideally double the throughput of the high-speed interface. <br>The TFD-IO uses a correlation-based technique to cancel the self-interference (SI) adaptively in the background. The signals transmitted from the near-end and the far-end can use independent baud-rates and signaling schemes in a TFD-IO. A proof-of-concept design of the TFD-IO module has been fabricated in a 65 nm CMOS technology, and demonstrated with bidirectional throughputs of up to 12.8\,Gb/s.

Development of ATC for High Speed and High Density Commuter Line

2007 ◽  
Vol 127 (10) ◽  
pp. 1033-1042
Author(s):  
Tamio Okutani ◽  
Nobuyuki Nakamura ◽  
Hisato Araki ◽  
Shouji Irie ◽  
Hiroki Osa ◽  
...  
Keyword(s):  
High Speed ◽  
High Density
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