A new test structure for the evaluation of graft-base lateral diffusion depth in high-performance bipolar transistors

Y. Tamaki; T. Shiba; T. Kure; T. Nakamura

doi:10.1109/66.311330

A new test structure for the evaluation of graft-base lateral diffusion depth in high-performance bipolar transistors

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/66.311330 ◽

1994 ◽

Vol 7 (3) ◽

pp. 279-283

Author(s):

Y. Tamaki ◽

T. Shiba ◽

T. Kure ◽

T. Nakamura

Keyword(s):

High Performance ◽

Lateral Diffusion ◽

Bipolar Transistors ◽

Test Structure ◽

Diffusion Depth

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Evaluating the graft base lateral diffusion depth of high-performance bipolar transistors by using test structures

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1993.292894 ◽

2002 ◽

Author(s):

Y. Tamaki ◽

T. Shiba ◽

T. Kure ◽

T. Nakamura

Keyword(s):

High Performance ◽

Lateral Diffusion ◽

Bipolar Transistors ◽

Diffusion Depth

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Very-high f/sub T/ and f/sub max/ silicon bipolar transistors using ultra-high-performance super self-aligned process technology for low-energy and ultra-high-speed LSI's

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.499323 ◽

2002 ◽

Cited By ~ 7

Author(s):

M. Ugajin ◽

J. Kodate ◽

Y. Kobayashi ◽

S. Konaka ◽

T. Sakai

Keyword(s):

High Speed ◽

High Performance ◽

Bipolar Transistors ◽

Low Energy ◽

Process Technology ◽

Ultra High Speed ◽

Very High

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Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513958 ◽

2002 ◽

Cited By ~ 2

Author(s):

M. Tanabe ◽

H. Shimamoto ◽

T. Onai ◽

K. Washio

Keyword(s):

Bipolar Transistors ◽

Test Structure ◽

Distribution Model ◽

Base Resistance ◽

Resistance Components ◽

Base Electrode

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Design considerations of high-performance narrow-emitter bipolar transistors

IEEE Electron Device Letters ◽

10.1109/edl.1987.26592 ◽

1987 ◽

Vol 8 (4) ◽

pp. 174-175 ◽

Cited By ~ 35

Author(s):

D.D. Tang ◽

Tze-Chiang Chen ◽

Ching-Te Chuang ◽

G.P. Li ◽

J.M.C. Stork ◽

...

Keyword(s):

High Performance ◽

Bipolar Transistors ◽

Design Considerations

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Variation in emitter diffusion depth by TiSi/sub 2/ formation on polysilicon emitters of Si bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.944203 ◽

2001 ◽

Vol 48 (9) ◽

pp. 2108-2117 ◽

Cited By ~ 1

Author(s):

M. Kondo ◽

H. Shimamoto ◽

K. Washio

Keyword(s):

Bipolar Transistors ◽

Diffusion Depth ◽

Polysilicon Emitters

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A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) ◽

10.1109/icmts.1999.766211 ◽

2003 ◽

Cited By ~ 1

Author(s):

M. Sanden ◽

Shi-Li Zhang ◽

J.V. Grahn ◽

M. Ostling

Keyword(s):

Bipolar Transistors ◽

Test Structure ◽

Model Parameters ◽

Direct Extraction ◽

Spice Model

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Novel BJT test structure for high-performance matching characteristics in CMOS-based analog applications

2011 IEEE ICMTS International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2011.5976846 ◽

2011 ◽

Cited By ~ 3

Author(s):

Yi-Jung Jung ◽

Byoung-Seok Park ◽

In-Shik Han ◽

Hyuk-Min Kwon ◽

Sang-Uk Park ◽

...

Keyword(s):

High Performance ◽

Test Structure

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High performance wafer scale flexible InP double heterogeneous bipolar transistors

Semiconductor Science and Technology ◽

10.1088/1361-6641/abe05b ◽

2021 ◽

Vol 36 (3) ◽

pp. 03LT02

Author(s):

LiShu Wu ◽

JiaYun Dai ◽

Yuan Wang ◽

YueChan Kong ◽

TangSheng Chen ◽

...

Keyword(s):

High Performance ◽

Bipolar Transistors ◽

Wafer Scale

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High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190678 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1564 ◽

Cited By ~ 2

Author(s):

Bing-Ruey Wu ◽

Benjamin F. Chu-Kung ◽

Milton Feng ◽

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Molecular Beam ◽

Bipolar Transistors ◽

Gas Source ◽

Double Heterojunction

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InAs bipolar transistors: a path to high-performance cryogenic electronics

10.1109/drc.1993.1009621 ◽

2005 ◽

Author(s):

P.E. Dodd ◽

M.R. Melloch ◽

M.S. Lundstrom ◽

J.M. Woodall ◽

D. Pettit

Keyword(s):

High Performance ◽

Bipolar Transistors ◽

Cryogenic Electronics

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