Variation in emitter diffusion depth by TiSi/sub 2/ formation on polysilicon emitters of Si bipolar transistors

M. Kondo; H. Shimamoto; K. Washio

doi:10.1109/16.944203

Variation in emitter diffusion depth by TiSi/sub 2/ formation on polysilicon emitters of Si bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.944203 ◽

2001 ◽

Vol 48 (9) ◽

pp. 2108-2117 ◽

Cited By ~ 1

Author(s):

M. Kondo ◽

H. Shimamoto ◽

K. Washio

Keyword(s):

Bipolar Transistors ◽

Diffusion Depth ◽

Polysilicon Emitters

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Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters

Solid-State Electronics ◽

10.1016/0038-1101(83)90107-7 ◽

1983 ◽

Vol 26 (5) ◽

pp. 495-498 ◽

Cited By ~ 30

Author(s):

B. Soerowirdjo ◽

P. Ashburn

Keyword(s):

Bipolar Transistors ◽

Surface Treatments ◽

Electrical Characteristics ◽

Polysilicon Emitters

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A new test structure for the evaluation of graft-base lateral diffusion depth in high-performance bipolar transistors

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/66.311330 ◽

1994 ◽

Vol 7 (3) ◽

pp. 279-283

Author(s):

Y. Tamaki ◽

T. Shiba ◽

T. Kure ◽

T. Nakamura

Keyword(s):

High Performance ◽

Lateral Diffusion ◽

Bipolar Transistors ◽

Test Structure ◽

Diffusion Depth

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Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment

IEEE Transactions on Electron Devices ◽

10.1109/16.141239 ◽

1992 ◽

Vol 39 (7) ◽

pp. 1717-1731 ◽

Cited By ~ 83

Author(s):

I.R.C. Post ◽

P. Ashburn ◽

G.R. Wolstenholme

Keyword(s):

Bipolar Transistors ◽

Polysilicon Emitters ◽

Theory And Experiment

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Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters

10.1109/iedm.1984.190834 ◽

1984 ◽

Cited By ~ 2

Author(s):

A. Cuthbertson ◽

P. Ashburn

Keyword(s):

Bipolar Transistors ◽

Polysilicon Emitters

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Evaluating the graft base lateral diffusion depth of high-performance bipolar transistors by using test structures

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1993.292894 ◽

2002 ◽

Author(s):

Y. Tamaki ◽

T. Shiba ◽

T. Kure ◽

T. Nakamura

Keyword(s):

High Performance ◽

Lateral Diffusion ◽

Bipolar Transistors ◽

Diffusion Depth

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Arsenic profiles in bipolar transistors with polysilicon emitters

Solid-State Electronics ◽

10.1016/0038-1101(81)90047-2 ◽

1981 ◽

Vol 24 (5) ◽

pp. 475-476 ◽

Cited By ~ 22

Author(s):

P. Ashburn ◽

B. Soerowirdjo

Keyword(s):

Bipolar Transistors ◽

Polysilicon Emitters

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Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

Journal of Applied Physics ◽

10.1063/1.1518770 ◽

2002 ◽

Vol 92 (11) ◽

pp. 6924-6926 ◽

Cited By ~ 3

Author(s):

M. J. Mitchell ◽

P. Ashburn ◽

P. L. F. Hemment

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Polysilicon Emitters

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73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

IEEE Electron Device Letters ◽

10.1109/55.145046 ◽

1992 ◽

Vol 13 (5) ◽

pp. 259-261 ◽

Cited By ~ 52

Author(s):

E.F. Crabbe ◽

J.H. Comfort ◽

W. Lee ◽

J.D. Cressler ◽

B.S. Meyerson ◽

...

Keyword(s):

Bipolar Transistors ◽

Polysilicon Emitters ◽

Phosphorus Doped

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Application of polysilicon emitters to high voltage bipolar transistors for realizing high quasi-saturation current limits under forced gain conditions

Proceedings of Canadian Conference on Electrical and Computer Engineering ◽

10.1109/ccece.1993.332416 ◽

2002 ◽

Cited By ~ 1

Author(s):

M.J. Kumar ◽

D.J. Roulston

Keyword(s):

High Voltage ◽

Bipolar Transistors ◽

Saturation Current ◽

Polysilicon Emitters

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TEM evaluation of graded SixGe1-x heterolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088786 ◽

1991 ◽

Vol 49 ◽

pp. 894-895

Author(s):

N. David Theodore ◽

Mamoru Tomozane ◽

Ming Liaw

Keyword(s):

Heterojunction Bipolar Transistors ◽

Gas Flow ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Dark Field ◽

Bipolar Transistors ◽

Structural Quality ◽

Weak Beam ◽

Transmission Electron ◽

And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

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