Status and trends of power semiconductor device models for circuit simulation

R. Kraus; H.J. Mattausch

doi:10.1109/63.668107

Status and trends of power semiconductor device models for circuit simulation

IEEE Transactions on Power Electronics ◽

10.1109/63.668107 ◽

1998 ◽

Vol 13 (3) ◽

pp. 452-465 ◽

Cited By ~ 83

Author(s):

R. Kraus ◽

H.J. Mattausch

Keyword(s):

Semiconductor Device ◽

Circuit Simulation ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Status And Trends

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Power semiconductor device models for use in discrete and power IC circuit simulation

IEEE Technical Applications Conference. Northcon/96. Conference Record ◽

10.1109/northc.1996.564726 ◽

2002 ◽

Author(s):

P.O. Lauritzen

Keyword(s):

Semiconductor Device ◽

Circuit Simulation ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Power Ic

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Power semiconductor device modelling dedicated to circuit simulation

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764034 ◽

2003 ◽

Cited By ~ 3

Author(s):

P. Leturcq

Keyword(s):

Semiconductor Device ◽

Circuit Simulation ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Device Modelling

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An investigation of the IGBT gate driving conditions employing an equivalent circuit model of power semiconductor device

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) ◽

10.23919/epe17ecceeurope.2017.8099165 ◽

2017 ◽

Author(s):

Hirofumi Uemura ◽

Daichi Yoshida ◽

Hiroyuki Matsumoto ◽

Hisashi Fujimoto ◽

Yasuhiro Okuma

Keyword(s):

Equivalent Circuit ◽

Semiconductor Device ◽

Equivalent Circuit Model ◽

Circuit Model ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Driving Conditions ◽

Gate Driving

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Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_240 ◽

2014 ◽

pp. 929-932

Author(s):

M. R. Jennings ◽

C. A. Fisher ◽

S. M. Thomas ◽

Y. Sharma ◽

D. Walker ◽

...

Keyword(s):

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Device Applications

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Clustered insulated gate bipolar transistor: a new power semiconductor device

IEE Proceedings - Circuits Devices and Systems ◽

10.1049/ip-cds:20010168 ◽

2001 ◽

Vol 148 (2) ◽

pp. 75 ◽

Cited By ~ 9

Author(s):

M. Sweet ◽

O. Spulber ◽

J.V. Subhas Chandra Bose ◽

L. Ngwendson ◽

K.V. Vershinin ◽

...

Keyword(s):

Semiconductor Device ◽

Bipolar Transistor ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Insulated Gate Bipolar Transistor

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Reliability odometer of power semiconductor device used for high performance high power amplifiers

2016 IEEE Energy Conversion Congress and Exposition (ECCE) ◽

10.1109/ecce.2016.7855389 ◽

2016 ◽

Cited By ~ 2

Author(s):

Fei Xu ◽

Juan Sabate ◽

Xi Lu ◽

Ruxi Wang ◽

Lou Frigo ◽

...

Keyword(s):

High Power ◽

Power Amplifiers ◽

High Performance ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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High-power semiconductor device: a symmetric gate commutated turn-off thyristor

IEE Proceedings - Electric Power Applications ◽

10.1049/ip-epa:20010435 ◽

2001 ◽

Vol 148 (4) ◽

pp. 363 ◽

Cited By ~ 16

Author(s):

H. Iwamoto ◽

K. Satoh ◽

M. Yamamoto ◽

A. Kawakami

Keyword(s):

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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A Pseudo Two-Dimensional Threshold Voltage Model for Low-Power Semiconductor Device PNIN Double-Gate-Tunneling Field Effect Transistor

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2016.5438 ◽

2016 ◽

Vol 13 (8) ◽

pp. 5454-5457

Author(s):

Hao Zhao-Ming ◽

Li Yu-Chen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Semiconductor Device ◽

Double Gate ◽

Two Dimensional ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Effect Transistor ◽

Threshold Voltage Model

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The integrated Emitter Turn-off Thyristor (IETO) - an innovative thyristor based high power semiconductor device using MOS assisted turn-off

2010 IEEE Energy Conversion Congress and Exposition ◽

10.1109/ecce.2010.5618410 ◽

2010 ◽

Cited By ~ 3

Author(s):

Michael Bragard ◽

Marcus Conrad ◽

Rik W. De Doncker

Keyword(s):

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) ◽

10.1109/ipec.2014.6869803 ◽

2014 ◽

Cited By ~ 2

Author(s):

Kihyun Lee ◽

Kyungsub Jung ◽

Seunghoo Song ◽

Yongsug Suh ◽

Changwoo Kim ◽

...

Keyword(s):

Wind Turbines ◽

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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