High-power semiconductor device: a symmetric gate commutated turn-off thyristor

H. Iwamoto; K. Satoh; M. Yamamoto; A. Kawakami

doi:10.1049/ip-epa:20010435

High-power semiconductor device: a symmetric gate commutated turn-off thyristor

IEE Proceedings - Electric Power Applications ◽

10.1049/ip-epa:20010435 ◽

2001 ◽

Vol 148 (4) ◽

pp. 363 ◽

Cited By ~ 16

Author(s):

H. Iwamoto ◽

K. Satoh ◽

M. Yamamoto ◽

A. Kawakami

Keyword(s):

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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Reliability odometer of power semiconductor device used for high performance high power amplifiers

2016 IEEE Energy Conversion Congress and Exposition (ECCE) ◽

10.1109/ecce.2016.7855389 ◽

2016 ◽

Cited By ~ 2

Author(s):

Fei Xu ◽

Juan Sabate ◽

Xi Lu ◽

Ruxi Wang ◽

Lou Frigo ◽

...

Keyword(s):

High Power ◽

Power Amplifiers ◽

High Performance ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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The integrated Emitter Turn-off Thyristor (IETO) - an innovative thyristor based high power semiconductor device using MOS assisted turn-off

2010 IEEE Energy Conversion Congress and Exposition ◽

10.1109/ecce.2010.5618410 ◽

2010 ◽

Cited By ~ 3

Author(s):

Michael Bragard ◽

Marcus Conrad ◽

Rik W. De Doncker

Keyword(s):

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) ◽

10.1109/ipec.2014.6869803 ◽

2014 ◽

Cited By ~ 2

Author(s):

Kihyun Lee ◽

Kyungsub Jung ◽

Seunghoo Song ◽

Yongsug Suh ◽

Changwoo Kim ◽

...

Keyword(s):

Wind Turbines ◽

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.910573 ◽

2008 ◽

Vol 55 (1) ◽

pp. 466-470 ◽

Cited By ~ 14

Author(s):

Hongfang Wang ◽

Fred Wang ◽

Junhong Zhang

Keyword(s):

Power Density ◽

High Power ◽

Figure Of Merit ◽

Semiconductor Device ◽

High Power Density ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Converter Design

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Simulation of the transient temperature distribution in a high-power semiconductor device cooling apparatus using heat pipes

Heat Transfer - Japanese Research ◽

10.1002/(sici)1520-6556(1997)26:2<107::aid-htj4>3.0.co;2-# ◽

1997 ◽

Vol 26 (2) ◽

pp. 107-115 ◽

Cited By ~ 2

Author(s):

Osamu Suzuki ◽

Kazumasa Fujioka ◽

Heikichi Kuwahara ◽

Toshio Takasaki

Keyword(s):

Temperature Distribution ◽

High Power ◽

Semiconductor Device ◽

Heat Pipes ◽

Transient Temperature ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Transient Temperature Distribution

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The Integrated Emitter Turn-Off Thyristor (IETO)—An Innovative Thyristor-Based High Power Semiconductor Device Using MOS Assisted Turn-Off

IEEE Transactions on Industry Applications ◽

10.1109/tia.2011.2161432 ◽

2011 ◽

Vol 47 (5) ◽

pp. 2175-2182 ◽

Cited By ~ 7

Author(s):

Michael Bragard ◽

Marcus Conrad ◽

Hauke van Hoek ◽

Rik W. De Doncker

Keyword(s):

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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The MOS controlled super junction transistor (SJBT): a new, highly efficient, high power semiconductor device for medium to high voltage applications

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016205 ◽

2003 ◽

Author(s):

F. Bauer

Keyword(s):

High Voltage ◽

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Highly Efficient ◽

Junction Transistor

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Monitoring of carrier lifetime distribution in high power semiconductor device technology

Microelectronics Journal ◽

10.1016/j.mejo.2007.11.015 ◽

2008 ◽

Vol 39 (6) ◽

pp. 884-889

Author(s):

J. Kozisek ◽

Z. Machacek ◽

V. Benda

Keyword(s):

High Power ◽

Carrier Lifetime ◽

Semiconductor Device ◽

Lifetime Distribution ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Device Technology

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An investigation of the IGBT gate driving conditions employing an equivalent circuit model of power semiconductor device

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) ◽

10.23919/epe17ecceeurope.2017.8099165 ◽

2017 ◽

Author(s):

Hirofumi Uemura ◽

Daichi Yoshida ◽

Hiroyuki Matsumoto ◽

Hisashi Fujimoto ◽

Yasuhiro Okuma

Keyword(s):

Equivalent Circuit ◽

Semiconductor Device ◽

Equivalent Circuit Model ◽

Circuit Model ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Driving Conditions ◽

Gate Driving

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Status and trends of power semiconductor device models for circuit simulation

IEEE Transactions on Power Electronics ◽

10.1109/63.668107 ◽

1998 ◽

Vol 13 (3) ◽

pp. 452-465 ◽

Cited By ~ 83

Author(s):

R. Kraus ◽

H.J. Mattausch

Keyword(s):

Semiconductor Device ◽

Circuit Simulation ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Status And Trends

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