Photoacoustic determination of the residual stress and transverse isotropic elastic moduli in thin films of the polyimide PMDA/ODA

1995 ◽  
Vol 42 (4) ◽  
pp. 555-566 ◽  
Author(s):  
J.A. Rogers ◽  
K.A. Nelson
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Elastic Moduli ◽  
Transverse Isotropic

scholarly journals Determination of the elastic moduli and residual stresses of freestanding Au-TiW bilayer thin films by nanoindentation

2016 ◽  
Vol 106 ◽  
pp. 436-445 ◽  
Author(s):  
Matteo Ghidelli ◽  
Marco Sebastiani ◽  
Christian Collet ◽  
Raphael Guillemet
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Elastic Moduli

Transverse isotropic elastic moduli and in-plane thermal diffusivity in silicon-supported thin films of a photosensitive polyimide measured using impulsive stimulated thermal scattering

Polymer ◽  
1995 ◽  
Vol 36 (21) ◽  
pp. 4069-4075 ◽  
Author(s):  
Jennifer K. Cocson ◽  
Christine S. Hau ◽  
Peijou M. Lee ◽  
Clara C. Poon ◽  
Annita H. Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Diffusivity ◽  
Elastic Moduli ◽  
Transverse Isotropic ◽  
Thermal Scattering

Calculation of Intrinsic Stresses and Elastic Moduli in Nonhomogeneous Thin Films

2000 ◽  
Vol 653 ◽  
Author(s):  
Pedro C. Andia ◽  
Francesco Costanzo ◽  
Gary L. Gray ◽  
Thomas J. Yurick
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stresses ◽  
Computer Simulations ◽  
System Application ◽  
Elastic Moduli ◽  
Particle System ◽  
Particle Systems

AbstractAn approach is presented for the determination of the residual stresses and elastic moduli of particle systems resulting from computer simulations of particle or atomic deposition. The proposed technique is based on fundamental concepts of elasticity and is capable of capturing the variation of stresses and moduli as functions of position within the system. Application to a simple particle system consisting of a deposited thin film is demonstrated.

scholarly journals Determination of residual stress and interface adhesion toughness of thin films by blisters

2019 ◽  
Vol 1 (5) ◽  
Author(s):  
Bo Yuan ◽  
Christopher M. Harvey ◽  
Gary W. Critchlow ◽  
Rachel C. Thomson ◽  
Simon Wang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Interface Adhesion ◽  
Adhesion Toughness

Determination of residual stress in low-temperature PECVD silicon nitride thin films

2004 ◽  
Author(s):  
Mariusz P. Martyniuk ◽  
Jarek Antoszewski ◽  
Charles A. Musca ◽  
John M. Dell ◽  
Lorenzo Faraone
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Low Temperature

Control of Stress with Growth Conditions and Mechanical Parameters Determination of 3C-SiC Heteroepitaxial Thin Films

2000 ◽  
Vol 657 ◽  
Author(s):  
C. Gourbeyre ◽  
T. Chassagne ◽  
M. Le Berre ◽  
G. Ferro ◽  
C. Malhaire ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Growth Conditions ◽  
Mean Value ◽  
Nano Indentation ◽  
Deposited Films

ABSTRACTWe report here on the influence of the epitaxial growth conditions on the residual stress of heteroepitaxial 3C-SiC grown on silicon using atmospheric-pressure chemical vapour deposition (APCVD) and on the determination of its mechanical properties. 3C-SiC films were grown on (100) Si substrates in a vertical reactor by APCVD. SiH4 and C3H8 are used as precursor gases and H2 as carrier gas. The growth procedure involves the formation of a carburization buffer layer at 1150°C under a mixture of H 2 and C3H8. The epitaxial growth occurs then at 1350°C by adding SiH 4.For as-deposited films the measurement techniques implemented are substrate curvature measurements, AFM, and nano-indentation. For micromachined self-suspended SiC membranes, load deflection measurements were used. The substrate curvature measurement leads to the determination of the residual stress in the deposited SiC film. We show that we can achieve 3C-SiC layers with a compressive or a tensile state having equivalent crystallinity. Whereas thermal mismatch just accounts for tensile stresses, we demonstrate that 3C-SiC thin films may have compressive stresses by using specific conditions for the formation of the buffer layer. The early stage of growth is indeed of major importance.Regarding the mechanical properties, the 3C-SiC Young's modulus was determined using nano-indentation. Its mean value reaches 378 GPa comparable to the calculated value of 307 GPa. As test structures, we have processed self-suspended SiC membranes. Load deflection measurements enable the determination of the Young's modulus and the residual stress of the self-suspended films. For self-suspended SiC membranes, the absolute value of the residual stress in the SiC thin films decreases compared to the as-deposited films and takes a mean value of 170 MPa in a tensile state.

Residual Stresses Gradient Determination in Cu Thin Films

2006 ◽  
Vol 524-525 ◽  
pp. 595-600 ◽  
Author(s):  
Jun Peng ◽  
Vincent Ji ◽  
Jian Min Zhang ◽  
Wilfrid Seiler
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Penetration Depth ◽  
Stress Gradient ◽  
Family Plan ◽  
New Development ◽  
Destructive Measurement ◽  
Non Destructive

The non-destructive analysis by GIXRD allows us to determine the residual stress distribution as a function of XRD penetration depth and film thickness. A new development on the determination of residual stresses distribution is presented here. The procedure, based on the GIXRD geometry (referred to here as the ‘sin2ψ*’), enables non-destructive measurement of stresses gradient with only one diffraction family plan at a chosen depth taking into account the correction of measured direction. The chosen penetration depth is well defined for different combination of ψ and Φ and needs not to be changed during experimentation. This method was applied for measurement of residual stress gradient in Cu thin films. The obtained residual stress levels and their distribution were quite comparable with those determined by another multi-reflection method.

scholarly journals Critical assessment of the determination of residual stress profiles in thin films by means of the ion beam layer removal method

2014 ◽  
Vol 564 ◽  
pp. 321-330 ◽  
Author(s):  
R. Schöngrundner ◽  
R. Treml ◽  
T. Antretter ◽  
D. Kozic ◽  
W. Ecker ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Ion Beam ◽  
Critical Assessment ◽  
Removal Method ◽  
Layer Removal ◽  
Layer Removal Method ◽  
Stress Profiles
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