Nucleation in Amorphous Si:H Alloy

1988 ◽  
Vol 100 ◽  
Author(s):  
Y. C. Koo ◽  
A. R. Perrin ◽  
K. T. Aust ◽  
S. Zukotynski
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Neutron Irradiation ◽  
Amorphous Material ◽  
Hydrogenated Amorphous Silicon ◽  
Neutron Radiation ◽  
Preliminary Results ◽  
Hydrogenated Amorphous ◽  
Microcrystalline Material

ABSTRACTA method of producing microcrystalline material from thin films of hydrogenated amorphous silicon was investigated. Exposure to gamma and neutron radiation, and silicon self ion implantation were used to induce nucleation in the amorphous material. According to the preliminary results, neutron irradiation represents a most promising method for promoting crystallization.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

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