A deep submicron CMOS process compatible suspending high-Q inductor

Chung-Hui Chen;  Yean-Kuen Fang;  Chih-Wei Yang; C.S. Tang

doi:10.1109/55.962650

A deep submicron CMOS process compatible suspending high-Q inductor

IEEE Electron Device Letters ◽

10.1109/55.962650 ◽

2001 ◽

Vol 22 (11) ◽

pp. 522-523 ◽

Cited By ~ 21

Author(s):

Chung-Hui Chen ◽

Yean-Kuen Fang ◽

Chih-Wei Yang ◽

C.S. Tang

Keyword(s):

Deep Submicron ◽

Cmos Process ◽

High Q ◽

Submicron Cmos

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MOS-Bounded Diodes for On-Chip ESD Protection in Deep Submicron CMOS Process

IEICE Transactions on Electronics ◽

10.1093/ietele/e88-c.3.429 ◽

2005 ◽

Vol E88-C (3) ◽

pp. 429-436 ◽

Cited By ~ 1

Author(s):

M.-D. KER

Keyword(s):

Deep Submicron ◽

Cmos Process ◽

Esd Protection ◽

Submicron Cmos ◽

On Chip

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Carbon doped SiGe heterojunction bipolar transistor module suitable for integration in a deep submicron CMOS process

2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522) ◽

10.1109/apmc.2000.925943 ◽

2002 ◽

Author(s):

H.J. Osten ◽

D. Knoll ◽

B. Heinemann ◽

H. Rucker ◽

K.E. Ehwald

Keyword(s):

Deep Submicron ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Cmos Process ◽

Carbon Doped ◽

Submicron Cmos

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A first digitally-controlled oscillator in a deep-submicron CMOS process for multi-GHz wireless applications

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 ◽

10.1109/rfic.2003.1213898 ◽

2003 ◽

Cited By ~ 35

Author(s):

R.B. Staszewski ◽

D. Leipold ◽

Chih-Ming Hung ◽

P.T. Balsara

Keyword(s):

Deep Submicron ◽

Cmos Process ◽

Wireless Applications ◽

Digitally Controlled ◽

Submicron Cmos ◽

Digitally Controlled Oscillator

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Yield enhancement for deep-submicron CMOS process by optimizing gate poly dimension

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.981429 ◽

2002 ◽

Author(s):

Yang Bin ◽

Sanford Chu ◽

Shen Wei ◽

Ng Chit Hwei ◽

Jia Tanli

Keyword(s):

Deep Submicron ◽

Yield Enhancement ◽

Cmos Process ◽

Submicron Cmos

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Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity

IEEE Transactions on Electron Devices ◽

10.1109/16.848297 ◽

2000 ◽

Vol 47 (7) ◽

pp. 1484-1491 ◽

Cited By ~ 11

Author(s):

E. Augendre ◽

R. Rooyackers ◽

M. Caymax ◽

E.P. Vandamme ◽

A. De Keersgieter ◽

...

Keyword(s):

High Performance ◽

Deep Submicron ◽

Process Window ◽

Cmos Process ◽

Selective Epitaxy ◽

Submicron Cmos ◽

Elevated Source

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Photodiodes in deep submicron CMOS process for fully integrated optical receivers

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2013.6818837 ◽

2013 ◽

Cited By ~ 5

Author(s):

Waqas Ahmad ◽

Markus Tormanen ◽

Henrik Sjoland

Keyword(s):

Deep Submicron ◽

Cmos Process ◽

Optical Receivers ◽

Fully Integrated ◽

Integrated Optical ◽

Submicron Cmos

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Development of a Deep-Submicron CMOS Process for Fabrication of High Performance 0.25 μm Transistors

2006 16th Biennial University/Government/Industry Microelectronics Symposium ◽

10.1109/ugim.2006.4286345 ◽

2006 ◽

Author(s):

Michael Aquilino ◽

Lynn F. Fuller

Keyword(s):

High Performance ◽

Deep Submicron ◽

Cmos Process ◽

Submicron Cmos

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Analysis on the dependence of layout parameters on ESD robustness of CMOS devices for manufacturing in deep-submicron CMOS process

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/tsm.2003.815200 ◽

2003 ◽

Vol 16 (3) ◽

pp. 486-500 ◽

Cited By ~ 25

Author(s):

Tung-Yang Chen ◽

Ming-Dou Ker

Keyword(s):

Deep Submicron ◽

Cmos Process ◽

Submicron Cmos

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Experimental studies of the noise properties of a deep submicron CMOS process

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/s0168-9002(00)01293-6 ◽

2001 ◽

Vol 461 (1-3) ◽

pp. 537-539 ◽

Cited By ~ 18

Author(s):

M. Manghisoni ◽

V. Re ◽

V. Speziali ◽

F. Svelto

Keyword(s):

Experimental Studies ◽

Deep Submicron ◽

Cmos Process ◽

Submicron Cmos

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Technology design for high current and ESD robustness in a deep submicron CMOS process

IEEE Electron Device Letters ◽

10.1109/55.320975 ◽

1994 ◽

Vol 15 (10) ◽

pp. 383-385 ◽

Cited By ~ 5

Author(s):

A. Amerasekera ◽

R.A. Chapman

Keyword(s):

Deep Submicron ◽

Cmos Process ◽

High Current ◽

Technology Design ◽

Submicron Cmos

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