Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity
2000 ◽
Vol 47
(7)
◽
pp. 1484-1491
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Keyword(s):
2000 ◽
Vol 47
(4)
◽
pp. 848-855
◽
2005 ◽
Vol E88-C
(3)
◽
pp. 429-436
◽
Keyword(s):
Keyword(s):
Keyword(s):
1996 ◽
Vol 79
(11)
◽
pp. 1-9
◽
2003 ◽
Vol 16
(3)
◽
pp. 486-500
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