Electrical properties of Al2O3–HfTiO laminate gate dielectric stacks with an equivalent oxide thickness below 0.8 nm

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3704-3708 ◽  
Author(s):  
V. Mikhelashvili ◽  
G. Eisenstein
Keyword(s):  
Electrical Properties ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness

Electrical Properties in High-k HfO[sub 2] Capacitors with an Equivalent Oxide Thickness of 9 Å on Ru Metal Electrode

2005 ◽  
Vol 8 (6) ◽  
pp. F17 ◽  
Author(s):  
Jeon-Ho Kim ◽  
Soon-Gil Yoon ◽  
Seung-Jin Yeom ◽  
Hyun-Kyung Woo ◽  
Deok-Sin Kil ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Electrode ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

Study on ZrO2 Deposited Directly on Si as an Alternative Gate Dielectric Material

1999 ◽  
Vol 606 ◽  
Author(s):  
Wen-Jie Qi ◽  
Renee Nieh ◽  
Byoung Hun Lee ◽  
Youngjoo Jeon ◽  
Laegu Kang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Dielectric Material ◽  
Oxide Thickness ◽  
Amorphous Structure ◽  
Flat Band ◽  
Equivalent Oxide Thickness ◽  
Low Leakage ◽  
Quantum Mechanical Effects

AbstractReactive-magnetron-sputtered ZrO2 thin film has been deposited on Si directly for gate dielectric application. Both structural and electrical properties of the ZrO2 film have been investigated. An amorphous structure for 30Å ZrO2 and a semi-amorphous structure for 200Å ZrO2 have been revealed. The sputtered film shows a good stoichiometry and a good structural stability of ZrO2 based on the X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy data. Thin equivalent oxide thickness of about 11.5Å was obtained without the consideration of quantum mechanical effects. A low leakage of less than 10−2 A/cm2 at ±1V relative to the flat band voltage was obtained for this 11.5Å equivalent oxide thickness Pt/ZrO2/Si structure. High effective dielectric breakdown and superior reliability properties have been demonstrated for ZrO2 gate dielectric.

High Quality Ultra Thin CVD Si3N4Gate Dielectrics Fabricated By Rapid Thermal Process

1999 ◽  
Vol 567 ◽  
Author(s):  
S. C. Song ◽  
H. F. Luan ◽  
M. Gardner ◽  
J. Fulford ◽  
M. Allen ◽  
...  
Keyword(s):  
Thermal Process ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Complete Suppression ◽  
Gate Leakage Current ◽  
Equivalent Oxide Thickness ◽  
Rapid Thermal Process ◽  
Electrical Stress ◽  
Boron Penetration

ABSTRACTIn this paper, we report performance and reliability of CMOS devices with ultra thin (<20Å) Si3N4gate dielectric fabricated by in-situ rapid thermal CVD (RTCVD) process, and compare with control SiO2devices of identical equivalent oxide thickness (Tox,eq). Ultra thin CVD Si3N4 devices show significantly lower gate leakage current, complete suppression of boron penetration, improved MOSFET performance, and enhanced reliability against electrical stress.

High temperature (1000 °C) compatible Y–La–Si–O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness

2011 ◽  
Vol 98 (25) ◽  
pp. 252901 ◽  
Author(s):  
C. Dubourdieu ◽  
E. Cartier ◽  
J. Bruley ◽  
M. Hopstaken ◽  
M. M. Frank ◽  
...  
Keyword(s):  
High Temperature ◽  
Direct Contact ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness

Electrical Characteristics of TaOxNy for High-k MOS Gate Dielectric Applications

2000 ◽  
Vol 611 ◽  
Author(s):  
Kiju Im ◽  
Hyungsuk Jung ◽  
Sanghun Jeon ◽  
Dooyoung Yang ◽  
Hyunsang Hwang
Keyword(s):  
Electron Spectroscopy ◽  
Gate Dielectric ◽  
Tantalum Oxide ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
Ammonia Treatment ◽  
High K ◽  
Mos Gate

ABSTRACTIn this paper, we report a process for the preparation of high quality amorphous tantalum oxynitride (TaOxNy) via ammonia annealing of Ta2O5 followed by wet reoxidation for use in gate dielectric applications. Compared with tantalum oxide(Ta2O5), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We confirmed nitrogen incorporation in the tantalum oxynitride (TaOxNy) by Auger Electron Spectroscopy. By optimizing the nitridation and reoxidation process, we obtained an equivalent oxide thickness of less than 1.6nm and a leakage current of less than 10mA/cm2 at -1.5V. Compared with NH3 nitridation, nitridation of Ta2O5 in ND3 improve charge trapping and charge-to-breakdown characteristics of tantalum oxynitride.

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

2011 ◽  
Vol 88 (7) ◽  
pp. 1309-1311 ◽  
Author(s):  
C.H. Fu ◽  
K.S. Chang-Liao ◽  
Y.A. Chang ◽  
Y.Y. Hsu ◽  
T.H. Tzeng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Equivalent Oxide Thickness ◽  
Gate Leakage ◽  
High K ◽  
High K Gate Dielectric

Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness

2001 ◽  
Vol 78 (12) ◽  
pp. 1718-1720 ◽  
Author(s):  
J. A. Gupta ◽  
D. Landheer ◽  
J. P. McCaffrey ◽  
G. I. Sproule
Keyword(s):  
Gate Dielectric ◽  
Oxide Thickness ◽  
Dielectric Films ◽  
Equivalent Oxide Thickness
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