AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

M.A. Khan; X. Hu; G. Sumin; A. Lunev; J. Yang; R. Gaska; M.S. Shur

doi:10.1109/55.821668

AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

IEEE Electron Device Letters ◽

10.1109/55.821668 ◽

2000 ◽

Vol 21 (2) ◽

pp. 63-65 ◽

Cited By ~ 306

Author(s):

M.A. Khan ◽

X. Hu ◽

G. Sumin ◽

A. Lunev ◽

J. Yang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics Letters ◽

10.1049/el:20010484 ◽

2001 ◽

Vol 37 (11) ◽

pp. 715 ◽

Cited By ~ 9

Author(s):

T. Rotter ◽

D. Mistele ◽

J. Stemmer ◽

M. Seyboth ◽

V. Schwegler ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.034101 ◽

2012 ◽

Vol 51 (3R) ◽

pp. 034101 ◽

Cited By ~ 6

Author(s):

Dong-Seok Kim ◽

Ki-Sik Im ◽

Hee-Sung Kang ◽

Ki-Won Kim ◽

Sung-Bum Bae ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor ◽

Recessed Gate

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AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator

Applied Physics Letters ◽

10.1063/1.1811793 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4214-4216 ◽

Cited By ~ 17

Author(s):

C. S. Oh ◽

C. J. Youn ◽

G. M. Yang ◽

K. Y. Lim ◽

J. W. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Impact of gate length and barrier thickness on performance of InP/InGaAs based Double Gate Metal–Oxide-Semiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET)

Superlattices and Microstructures ◽

10.1016/j.spmi.2012.12.002 ◽

2013 ◽

Vol 55 ◽

pp. 8-15 ◽

Cited By ~ 9

Author(s):

Sudhansu Kumar Pati ◽

Hemant Pardeshi ◽

Godwin Raj ◽

N. Mohan Kumar ◽

Chandan Kumar Sarkar

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Double Gate ◽

Barrier Thickness ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Deformation of the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor characteristics by UV irradiation

Journal of IKEEE ◽

10.7471/ikeee.2013.17.4.531 ◽

2013 ◽

Vol 17 (4) ◽

pp. 531-536

Author(s):

Jin Hong Lim ◽

Jeong Jin Kim ◽

Jeon Wook Yang

Keyword(s):

Metal Oxide ◽

Uv Irradiation ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

Applied Physics Letters ◽

10.1063/1.2716846 ◽

2007 ◽

Vol 90 (12) ◽

pp. 123513 ◽

Cited By ~ 62

Author(s):

P. Kordoš ◽

D. Gregušová ◽

R. Stoklas ◽

K. Čičo ◽

J. Novák

Keyword(s):

Metal Oxide ◽

Transport Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Flicker Noise of AlGaN∕GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor with a Photo-CVD SiO[sub 2] Layer

Journal of The Electrochemical Society ◽

10.1149/1.2405842 ◽

2007 ◽

Vol 154 (2) ◽

pp. H119 ◽

Cited By ~ 3

Author(s):

C. H. Liu ◽

K. T. Lam ◽

S. J. Chang ◽

C. K. Wang ◽

Y. S. Sun

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Flicker Noise ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l748 ◽

2002 ◽

Vol 41 (Part 2, No. 7A) ◽

pp. L748-L750 ◽

Cited By ~ 25

Author(s):

Dei-Wei Chou ◽

Kuan-Wei Lee ◽

Jian-Jun Huang ◽

Hou-Run Wu ◽

Yeong-Her Wang ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

Applied Physics Letters ◽

10.1063/1.3275754 ◽

2010 ◽

Vol 96 (1) ◽

pp. 013505 ◽

Cited By ~ 33

Author(s):

P. Kordoš ◽

R. Stoklas ◽

D. Gregušová ◽

Š. Gaži ◽

J. Novák

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Dependent ◽

Semiconductor Heterostructure ◽

Effect Transistor ◽

Trapping Effects

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Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.034101 ◽

2012 ◽

Vol 51 ◽

pp. 034101 ◽

Cited By ~ 6

Author(s):

Dong-Seok Kim ◽

Ki-Sik Im ◽

Hee-Sung Kang ◽

Ki-Won Kim ◽

Sung-Bum Bae ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor ◽

Recessed Gate

Download Full-text