Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

2010 ◽  
Vol 96 (1) ◽  
pp. 013505 ◽  
Author(s):  
P. Kordoš ◽  
R. Stoklas ◽  
D. Gregušová ◽  
Š. Gaži ◽  
J. Novák
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Semiconductor Heterostructure ◽  
Effect Transistor ◽  
Trapping Effects

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

2001 ◽  
Vol 37 (11) ◽  
pp. 715 ◽  
Author(s):  
T. Rotter ◽  
D. Mistele ◽  
J. Stemmer ◽  
M. Seyboth ◽  
V. Schwegler ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Effect Transistor

AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

2000 ◽  
Vol 21 (2) ◽  
pp. 63-65 ◽  
Author(s):  
M.A. Khan ◽  
X. Hu ◽  
G. Sumin ◽  
A. Lunev ◽  
J. Yang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Effect Transistor

AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide

2002 ◽  
Vol 41 (Part 2, No. 7A) ◽  
pp. L748-L750 ◽  
Author(s):  
Dei-Wei Chou ◽  
Kuan-Wei Lee ◽  
Jian-Jun Huang ◽  
Hou-Run Wu ◽  
Yeong-Her Wang ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Effect Transistor
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