Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N2O-plasma gate oxide

1998 ◽  
Vol 19 (12) ◽  
pp. 458-460 ◽  
Author(s):  
Jin-Woo Lee ◽  
Nae-In Lee ◽  
Chul-Hi Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Oxide ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Improved Stability

Reliability of Low Temperature Polycrystalline Silicon Thin-Film Transistors with Ultrathin Gate Oxide

2007 ◽  
Vol 46 (7A) ◽  
pp. 4021-4027 ◽  
Author(s):  
Hitoshi Ueno ◽  
Yuta Sugawara ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Oxide ◽  
Silicon Thin Film

Analysis of low frequency noise characteristics in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740020
Author(s):  
Yuan Liu ◽  
Yun-Fei En ◽  
Wen-Xiao Fang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Gate Oxide ◽  
Localized States ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
P Type

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f[Formula: see text] (with [Formula: see text] near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge’s parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be [Formula: see text]. By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while [Formula: see text] is about [Formula: see text], [Formula: see text] is [Formula: see text][Formula: see text]617 K, [Formula: see text] is [Formula: see text] and [Formula: see text] is [Formula: see text][Formula: see text]265 K.

Kink effect in short-channel polycrystalline silicon thin-film transistors

2004 ◽  
Vol 85 (15) ◽  
pp. 3113-3115 ◽  
Author(s):  
A. Valletta ◽  
P. Gaucci ◽  
L. Mariucci ◽  
G. Fortunato ◽  
S. D. Brotherton
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Kink Effect

EFFECT OF TRAP STATES AT THE OXIDE-SILICON INTERFACE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

2008 ◽  
Vol 22 (30) ◽  
pp. 5357-5364
Author(s):  
NAVNEET GUPTA
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
State Density ◽  
Trap States ◽  
Silicon Thin Film ◽  
Gate Oxide Thickness ◽  
Silicon Interface

This work presents the study of the effect of trap states at the oxide-silicon interface in lightly doped polycrystalline silicon thin-film transistors with large grains. In this study, it is assumed that the oxide-silicon interface traps are evenly distributed throughout the interface region and single grain boundary is present in the channel of poly-Si TFT. It is shown that improved device characteristics can be obtained by reducing the gate oxide thickness. It is also observed that as gate oxide thickness decreases for a constant value of trap state density in the oxide-silicon interface, the gate voltage required for channel formation is lowered and leads to a decrease in threshold voltage of the device. Calculated and experimental results are also found to be well consistent with each other.

Superior Reliability of Gate-All-Around Polycrystalline Silicon Thin-Film Transistors with Vacuum Cavities Next to Gate Oxide Edges

2011 ◽  
Vol 50 (1R) ◽  
pp. 014202
Author(s):  
Han-Wen Liu ◽  
Si-Ming Chiou ◽  
Hui-Ching Huang ◽  
Jeng Gong ◽  
Fang-Hsing Wang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Oxide ◽  
Silicon Thin Film
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