Kink effect in short-channel polycrystalline silicon thin-film transistors

2004 ◽  
Vol 85 (15) ◽  
pp. 3113-3115 ◽  
Author(s):  
A. Valletta ◽  
P. Gaucci ◽  
L. Mariucci ◽  
G. Fortunato ◽  
S. D. Brotherton
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Kink Effect

Kink Effect in Short Channel a-Si:H Thin-Film Transistors

1992 ◽  
Vol 258 ◽  
Author(s):  
G. Fortunato ◽  
L. Mariucci ◽  
A. Mattacchini ◽  
A. Pecora
Keyword(s):  
Thin Film ◽  
Electron Beam Lithography ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Drain Voltage ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Kink Effect ◽  
Generation Mechanisms ◽  
First Time

ABSTRACTAn avalanche increase of the drain current for high source-drain voltage (commonly called “kink effect”) has been observed for the first time in short-channel amorphous silicon thin-film transistors, fabricated using electron-beam lithography. This effect, caused by generation mechanisms at the drain junction, has been shown to be not only field but also temperature enhanced. The Frenkel-Poole mechanism is proposed in order to explain the data.

Analysis of threshold voltage of short channel polycrystalline silicon thin-film transistors fabricated on large grains

2006 ◽  
Vol 100 (11) ◽  
pp. 114507 ◽  
Author(s):  
Genshiro Kawachi ◽  
Shinzo Tsuboi ◽  
Takashi Okada ◽  
Masahiro Mitani ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Short Channel
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