Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

1990 ◽  
Vol 11 (6) ◽  
pp. 258-260 ◽  
Author(s):  
H. Kanoh ◽  
O. Sugiura ◽  
P.A. Breddels ◽  
M. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Silicon Silicon

Thin-Film Transistors based on Hot-Wire Amorphous Silicon on Silicon Nitride

1999 ◽  
Vol 557 ◽  
Author(s):  
B. Stannowski ◽  
H. Meiling ◽  
A. M. Brockhoff ◽  
R. E. I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Glow Discharge ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire

AbstractWe present state-of-the-art thin-film transistors (TFTs) incorporating amorphous silicon i-layers deposited by hot-wire chemical vapor deposition. The TFTs are deposited on glow-discharge silicon nitride as well as on thermally-grown silicon dioxide. The devices on silicon nitride have a field-effect mobility above 0.7 cm2/Vs, a threshold voltage around 2 V and a sub-threshold slope as low as 0.5 V/dec. As commonly observed, the TFTs on silicon-dioxide have higher values for the threshold voltage and the sub-threshold slope. In the annealed state the hot-wire TFTs show almost the same properties as TFTs deposited by conventional plasma-enhanced chemical vapor deposition. Nevertheless, the stress-time dependent behavior under prolonged gate-voltage stress at elevated temperature is different from that of the glow-discharge devices. The hot-wire TFTs are clearly more stable than their glow-discharge counterparts. Furthermore, we found differences in the stress behavior of the hot-wire TFTs deposited on silicon nitride and silicon dioxide.

Towards an All-Hot-Wire TFT: Silicon Nitride and amorphous Silicon deposited by Hot-Wire Chemical Vapor Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
B. Stannowski ◽  
M.K. van Veen ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire

ABSTRACTWe present thin-film transistors with both amorphous silicon and silicon nitride deposited by hot-wire chemical vapor deposition. Hot-wire amorphous silicon with good electrical properties was deposited from the decomposition of silane at a substrate temperature of 250°C. For Hot-wire silicon nitride we used silane and ammonia at a substrate temperature of 340°C. In this paper we address structural and electrical properties of this material. A high ammonia flow results in porous films that exhibit post-deposition oxidation. By limiting the ammonia/silane ratio to 30, compact layers with a hydrogen content of only 10 at.% and a refractive index of 1.95 are obtained. Using this layer as gate dielectric results in thin-film transistors with good switching behavior and a field-effect mobility of 0.3 cm2/Vs.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Surface physical property of the CrO2 thin films prepared using a closed chemical vapor deposition method

2012 ◽  
Vol 1406 ◽  
Author(s):  
Y. Muraoka ◽  
S. Yoshida ◽  
T. Wakita ◽  
M. Hirai ◽  
T. Yokoya
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Surface ◽  
Chemical Vapor ◽  
Physical Property ◽  
Physical Nature ◽  
Photoemission Spectroscopy ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method

ABSTRACTWe have examined the intrinsic surface physical property of a CrO2 thin film by means of surface sensitive photoemission spectroscopy. Epitaxial thin film of CrO2(100) has been grown on TiO2(100) by a closed chemical vapor deposition method using a Cr8O21 precursor. Low-energy electron diffraction (LEED) observations find that epitaxial growth of rutile-phase CrO2 occurs to the top monolayer of the film. Surface sensitive x-ray photoemission spectroscopy (XPS) measurements show a finite intensity in the region of the Fermi energy. The result evidences that the physical nature of near topmost layer of CrO2 thin film is metallic. Progress of understanding of the surface physical property of CrO2 thin film helps not only perform a reliable photoemission study to understand the physics of ferromagnetic metal in CrO2, but also develop the CrO2-based devices using a half-metallic nature for spintronics applications.

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