Measurement of a cross-section for single-event gate rupture in power MOSFETs

1996 ◽  
Vol 17 (4) ◽  
pp. 163-165 ◽  
Author(s):  
I. Mouret ◽  
P. Calvel ◽  
M. Allenspach ◽  
J.L. Titus ◽  
C.F. Wheatley ◽  
...  
Keyword(s):  
Cross Section ◽  
Single Event ◽  
Power Mosfets

A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

1996 ◽  
Vol 43 (6) ◽  
pp. 2932-2937 ◽  
Author(s):  
G.H. Johnson ◽  
K.F. Galloway ◽  
R.D. Schrimpf ◽  
J.L. Titus ◽  
C.F. Wheatley ◽  
...  
Keyword(s):  
Cross Section ◽  
Physical Interpretation ◽  
Single Event ◽  
Channel Power ◽  
Power Mosfets

Mechanism for single-event burnout of power MOSFETs and its characterization technique

1992 ◽  
Vol 39 (6) ◽  
pp. 1698-1703 ◽  
Author(s):  
S. Kuboyama ◽  
S. Matsuda ◽  
T. Kanno ◽  
T. Ishii
Keyword(s):  
Single Event ◽  
Power Mosfets ◽  
Characterization Technique

Laser cross section measurement for the evaluation of single-event effects in integrated circuits

2000 ◽  
Vol 40 (8-10) ◽  
pp. 1371-1375 ◽  
Author(s):  
V. Pouget ◽  
P. Fouillat ◽  
D. Lewis ◽  
H. Lapuyade ◽  
F. Darracq ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Cross Section ◽  
Single Event ◽  
Cross Section Measurement ◽  
Single Event Effects ◽  
Section Measurement

scholarly journals Qualification of Operational Amplifier used in Satellite Subsystem using Picosecond Pulsed Laser System

2020 ◽  
Vol 9 (2) ◽  
pp. 523-527
Keyword(s):  
Cross Section ◽  
Operational Amplifier ◽  
Second Harmonic ◽  
Laser System ◽  
Threshold Energy ◽  
Pulsed Laser ◽  
Spot Size ◽  
Single Event ◽  
532 Nm ◽  
Pulsed Laser Irradiation

Picosecond Pulsed Laser System (PPLS) was used to simulate the single event effects (SEE) on satellite electronic components. Single event transients effect induced in an operational amplifier (LM324) to determine how transient amplitude and charge collection varied with pulsed laser energies. The wavelength and the focused spot size are the primary factors generating the resultant charge density profile. The degradation performance of LM324 induced by pulsed laser irradiation with two wavelength (1064nm, 532nm) is determined as a function of laser cross section. The transient voltage changed due to pulsed laser hitting specific transistors. This research shows the sensitivity mapping of LM324 under the effect of fundamental and second harmonic wavelengths. Determine the threshold energy of the SET in both wavelength, and compare the laser cross section of 1064 nm beam and 532 nm beam.

scholarly journals Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs

2021 ◽  
Author(s):  
Chao Peng ◽  
Zhifeng Lei ◽  
Ziwen Chen ◽  
Shaozhong Yue ◽  
Zhangang Zhang ◽  
...  
Keyword(s):  
Simulation Studies ◽  
Single Event ◽  
Power Mosfets ◽  
Radiation Induced

Acquisition and classification of static single-event upset cross section for SRAM-based FPGAs

2011 ◽  
Vol 23 (3) ◽  
pp. 811-816
Author(s):  
姚志斌 Yao Zhibin ◽  
范如玉 Fan Ruyu ◽  
郭红霞 Guo Hongxia ◽  
王忠明 Wang Zhongming ◽  
何宝平 He Baoping ◽  
...  
Keyword(s):  
Cross Section ◽  
Single Event Upset ◽  
Single Event

Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 738-741
Author(s):  
Hiroshi Kono ◽  
Teruyuki Ohashi ◽  
Takao Noda ◽  
Kenya Sano
Keyword(s):  
Threshold Voltage ◽  
Drift Region ◽  
Single Event ◽  
Drain Voltage ◽  
Device Structure ◽  
Pin Diodes ◽  
Power Mosfets ◽  
Single Event Effect ◽  
Significant Difference ◽  
Avalanche Breakdown Voltage

Neutron single event effect (SEE) tolerance of SiC power MOSFETs with different drift region design were evaluated. The SEE is detected over the SEE threshold voltage (VSEE). The failure rate increases exponentially as the drain voltage increases above VSEE. The device with higher avalanche breakdown voltage has higher SEE threshold voltage. The neutron SEE tolerance of MOSFETs and PiN diodes of the same epitaxial structure were also evaluated. There was no significant difference in the neutron SEE tolerance of these devices.

Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs

2020 ◽  
Vol 67 (9) ◽  
pp. 3698-3704
Author(s):  
Jiang Lu ◽  
Jiawei Liu ◽  
Xiaoli Tian ◽  
Hong Chen ◽  
Yidan Tang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Single Event ◽  
Power Mosfets ◽  
Event Response
Sign in / Sign up

Export Citation Format

Share Document