High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances

1993 ◽  
Vol 14 (12) ◽  
pp. 548-550 ◽  
Author(s):  
T. Kimoto ◽  
T. Urushidani ◽  
S. Kobayashi ◽  
H. Matsunami
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

Silicon-carbide high-voltage (400 V) Schottky barrier diodes

1992 ◽  
Vol 13 (10) ◽  
pp. 501-503 ◽  
Author(s):  
M. Bhatnagar ◽  
P.K. McLarty ◽  
B.J. Baliga
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

2014 ◽  
Vol 31 (6) ◽  
pp. 068502 ◽  
Author(s):  
He Kang ◽  
Quan Wang ◽  
Hong-Ling Xiao ◽  
Cui-Mei Wang ◽  
Li-Juan Jiang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

scholarly journals Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate

2002 ◽  
Vol 122 (5) ◽  
pp. 637-643
Author(s):  
Hidekazu Tsuchida ◽  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
Schottky Barrier ◽  
High Voltage ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes

The guard-ring termination for the high-voltage SiC Schottky barrier diodes

1995 ◽  
Vol 16 (7) ◽  
pp. 331-332 ◽  
Author(s):  
K. Ueno ◽  
T. Urushidani ◽  
K. Hashimoto ◽  
Y. Seki
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Guard Ring ◽  
Schottky Barrier Diodes

Fabrication of 3.4kV high voltage n-type 4H-SiC Schottky barrier diodes using thick epitaxial layers

2000 ◽  
Vol 640 ◽  
Author(s):  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Shinji Ogino ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
High Yield ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes ◽  
Leakage Currents ◽  
Bright Spots ◽  
Blocking Voltage ◽  
Voltage Region ◽  
The Ideal

ABSTRACTFabrication and evaluation of high voltage n-type 4H-SiC Schottky barrier diodes (SBDs) using 27μm thick epitaxial layers were presented. To achieve the ideal value of the breakdown voltage, various parameters of junction termination extension (JTE) were investigated. We concluded that the termination of triple rings with the concentrations of 6×1017, 3×1017, 1.5×1017cm−1 outwardly was best with the simulations. The SBDs with this termination showed the blocking voltage up to 3.4kV, which is almost the ideal value. We also investigated the distribution of leakage currents at -600V in SBDs with various diameters up to 4mm. High yield was obtained in the SBDs with the diameters below 2mm. The SBDs with high leakage currents showed the excess currents in the low forward voltage region and lots of bright spots could be observed by optical beam induced current analysis.

High voltage 4H-SiC Schottky barrier diodes

1995 ◽  
Vol 16 (6) ◽  
pp. 226-227 ◽  
Author(s):  
R. Raghunathan ◽  
D. Alok ◽  
B.J. Baliga
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes
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