scholarly journals Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

2005 ◽  
Vol 87 (5) ◽  
pp. 051912 ◽  
Author(s):  
H. Fujiwara ◽  
T. Kimoto ◽  
T. Tojo ◽  
H. Matsunami
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Stacking Faults ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes

scholarly journals Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate

2002 ◽  
Vol 122 (5) ◽  
pp. 637-643
Author(s):  
Hidekazu Tsuchida ◽  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
Schottky Barrier ◽  
High Voltage ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes

Fabrication of 3.4kV high voltage n-type 4H-SiC Schottky barrier diodes using thick epitaxial layers

2000 ◽  
Vol 640 ◽  
Author(s):  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Shinji Ogino ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
High Yield ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes ◽  
Leakage Currents ◽  
Bright Spots ◽  
Blocking Voltage ◽  
Voltage Region ◽  
The Ideal

ABSTRACTFabrication and evaluation of high voltage n-type 4H-SiC Schottky barrier diodes (SBDs) using 27μm thick epitaxial layers were presented. To achieve the ideal value of the breakdown voltage, various parameters of junction termination extension (JTE) were investigated. We concluded that the termination of triple rings with the concentrations of 6×1017, 3×1017, 1.5×1017cm−1 outwardly was best with the simulations. The SBDs with this termination showed the blocking voltage up to 3.4kV, which is almost the ideal value. We also investigated the distribution of leakage currents at -600V in SBDs with various diameters up to 4mm. High yield was obtained in the SBDs with the diameters below 2mm. The SBDs with high leakage currents showed the excess currents in the low forward voltage region and lots of bright spots could be observed by optical beam induced current analysis.

Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes

2005 ◽  
Vol 483-485 ◽  
pp. 941-944 ◽  
Author(s):  
M. Furno ◽  
F. Bonani ◽  
G. Ghione ◽  
Sergio Ferrero ◽  
Samuele Porro ◽  
...  
Keyword(s):  
Experimental Study ◽  
Numerical Simulations ◽  
Schottky Barrier ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes ◽  
Electrical Measurements ◽  
Process Technology ◽  
Edge Termination ◽  
Fabrication And Characterization

We present a theoretical and experimental study on the design, fabrication and characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers. Numerical simulations were performed with a commercial tool on different edge termination structures, with the aim of optimizing the device behavior. For each termination design, SBD were fabricated and characterized by means of electrical measurements vs. temperature. Simulations provided also useful data for the assessment of the device process technology.

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

2021 ◽  
Vol 118 (17) ◽  
pp. 172106
Author(s):  
Sayleap Sdoeung ◽  
Kohei Sasaki ◽  
Satoshi Masuya ◽  
Katsumi Kawasaki ◽  
Jun Hirabayashi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Vapor Phase ◽  
Stacking Faults ◽  
Schottky Barrier Diodes

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Characterization of aluminum/LPCVD polysilicon Schottky barrier diodes

1987 ◽  
Vol 30 (3) ◽  
pp. 339-343
Author(s):  
Dao-Long Chen ◽  
David W. Greve ◽  
Alberto M. Guzman
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes

Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

Vacuum ◽  
2000 ◽  
Vol 57 (2) ◽  
pp. 219-228 ◽  
Author(s):  
B. Akkal ◽  
Z. Benamara ◽  
B. Gruzza ◽  
L. Bideux
Keyword(s):  
Schottky Barrier ◽  
Interface States ◽  
Schottky Barrier Diodes

Silicon-carbide high-voltage (400 V) Schottky barrier diodes

1992 ◽  
Vol 13 (10) ◽  
pp. 501-503 ◽  
Author(s):  
M. Bhatnagar ◽  
P.K. McLarty ◽  
B.J. Baliga
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes
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