Roles of low field mobility and its carrier-concentration dependences in high electron mobility transistors and other field effect transistors

1988 ◽  
Vol 9 (3) ◽  
pp. 133-135 ◽  
Author(s):  
H. Sakaki ◽  
J.-I. Motohisa ◽  
K. Hirakawa
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Low Field ◽  
Concentration Dependences ◽  
Field Mobility ◽  
Low Field Mobility

scholarly journals Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

2021 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
Andrei Vorobiev
Keyword(s):  
Carrier Transport ◽  
Peak Velocity ◽  
Transverse Field ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm<sup>2</sup>/Vs and 1.2x10<sup>6</sup> cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10<sup>7</sup> cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

scholarly journals Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

2021 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
Andrei Vorobiev
Keyword(s):  
Carrier Transport ◽  
Peak Velocity ◽  
Transverse Field ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm<sup>2</sup>/Vs and 1.2x10<sup>6</sup> cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10<sup>7</sup> cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors

2015 ◽  
Vol 1763 ◽  
Author(s):  
Espinosa Nayeli ◽  
Schwarz U. Stefan ◽  
Cimalla Volker ◽  
Ambacher Oliver
Keyword(s):  
Detection Limit ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Adsorption Model ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Target Dna

ABSTRACTThis work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before the application of target-DNA. Concentrations of 10-15 to 10-6 mol/L were tested. The sensor has a detection limit of 10-12 mol/L and saturates after the addition of 10-8 mol/L target-DNA.

scholarly journals Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

2021 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
Andrei Vorobiev
Keyword(s):  
Carrier Transport ◽  
Peak Velocity ◽  
Transverse Field ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm<sup>2</sup>/Vs and 1.2x10<sup>6</sup> cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10<sup>7</sup> cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

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