Selectively dry gate recessed GaAs metal–semiconductor field-effect transistors, high electron mobility transistors, and monolithic microwave integrated circuits

1993 ◽  
Vol 11 (6) ◽  
pp. 2244 ◽  
Author(s):  
N. I. Cameron
Keyword(s):  
Integrated Circuits ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Microwave Integrated Circuits ◽  
High Electron Mobility ◽  
Monolithic Microwave Integrated Circuits ◽  
Electron Mobility Transistors

Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors

2015 ◽  
Vol 1763 ◽  
Author(s):  
Espinosa Nayeli ◽  
Schwarz U. Stefan ◽  
Cimalla Volker ◽  
Ambacher Oliver
Keyword(s):  
Detection Limit ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Adsorption Model ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Target Dna

ABSTRACTThis work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before the application of target-DNA. Concentrations of 10-15 to 10-6 mol/L were tested. The sensor has a detection limit of 10-12 mol/L and saturates after the addition of 10-8 mol/L target-DNA.

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