Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors

2015 ◽  
Vol 1763 ◽  
Author(s):  
Espinosa Nayeli ◽  
Schwarz U. Stefan ◽  
Cimalla Volker ◽  
Ambacher Oliver
Keyword(s):  
Detection Limit ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Adsorption Model ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Target Dna

ABSTRACTThis work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before the application of target-DNA. Concentrations of 10-15 to 10-6 mol/L were tested. The sensor has a detection limit of 10-12 mol/L and saturates after the addition of 10-8 mol/L target-DNA.

scholarly journals Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

2021 ◽  
Author(s):  
Peng Cui ◽  
Yuping Zeng
Keyword(s):  
Electric Field ◽  
Electron Mobility ◽  
Scattering Theory ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
Electron Velocity ◽  
High Electron ◽  
Current Output ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Abstract Electron mobility is important for electron velocity, transport current, output power, and frequency characteristics. In conventional mobility extraction methods, electron mobility is usually extracted directly from the measured gate capacitance (CG) and current-voltage characteristics. When device gate length (LG) scales to sub-100 nm, the determination of CG becomes more difficult not only for the measure equipment but also the enhanced effect from parasitic capacitance. Here in this paper, the CG extracted from high-frequency small-signal equipment circuit is used for the InAlN/GaN high electron mobility transistors (HEMTs). Electron mobility of the device with LG of 60-nm under VDS of 0.1 V and 10 V is extracted using two-dimensional scattering theory, respectively. The obtained results show that under a high electric field, the electron temperature (Te) and addition polarization charges (∆σ) increase, resulting in the enhanced polar optical phonon (POP) as well as polarization Coulomb field (PCF) scatterings and degradation of the electron mobility. This study makes it possible to improve the electron mobility by reducing Te and ∆σ for the InAlN/GaN HEMTs application.AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the influence of the different gate lengths on the PCF scattering potential was confirmed.

HIGH-FREQUENCY NOISE IN PSEUDOMORPHIC DOUBLE-HETEROJUNCTION HIGH ELECTRON MOBILITY TRANSISTORS

2002 ◽  
Vol 02 (01) ◽  
pp. L13-L19 ◽  
Author(s):  
S. LONG ◽  
L. ESCOTTE ◽  
J. GRAFFEUIL ◽  
P. FELLON ◽  
D. GEIGER ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Noise Figure ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Frequency Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Double Heterojunction

The noise behavior of pseudomorphic double-heterojunction high electron mobility transistors dedicated to power applications is investigated in this paper and compared to conventional low noise field effect transistors. The noise is analyzed from an extrinsic and an intrinsic point of view. It appears that the minimum noise figure is similar for the two devices even if the intrinsic noise sources are different. We explain this phenomenon using the double-heterojunction mode of operation.

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