Monolithic integration of 5 V CMOS and high-voltage devices

1992 ◽  
Vol 13 (11) ◽  
pp. 575-577 ◽  
Author(s):  
Q. Huang ◽  
G.A.J. Amaratunga ◽  
J. Humphrey ◽  
E.M.S. Narayanan ◽  
W.I. Milne ◽  
...  
Keyword(s):  
High Voltage ◽  
Monolithic Integration

A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode

2017 ◽  
Vol 38 (4) ◽  
pp. 501-504 ◽  
Author(s):  
Jie Ren ◽  
Chao Liu ◽  
Chak Wah Tang ◽  
Kei May Lau ◽  
Johnny K. O. Sin
Keyword(s):  
High Voltage ◽  
Monolithic Integration ◽  
Integration Technology

High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors

2013 ◽  
Vol 60 (2) ◽  
pp. 771-775 ◽  
Author(s):  
Hidekazu Umeda ◽  
Toshiyuki Takizawa ◽  
Yoshiharu Anda ◽  
Tetsuzo Ueda ◽  
Tsuyoshi Tanaka
Keyword(s):  
Ion Implantation ◽  
High Voltage ◽  
Monolithic Integration ◽  
Isolation Technique

High Voltage Electron Microscopy of Ion-Milled Dental Enamel

1974 ◽  
Vol 32 ◽  
pp. 60-61
Author(s):  
L. D. Ackerman ◽  
S. H. Y. Wei
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Third Molar ◽  
Polarized Light ◽  
Dental Enamel ◽  
Longitudinal Section ◽  
Ion Milling ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron

Mature human dental enamel has presented investigators with several difficulties in ultramicrotomy of specimens for electron microscopy due to its high degree of mineralization. This study explores the possibility of combining ion-milling and high voltage electron microscopy as a means of circumventing the problems of ultramicrotomy.A longitudinal section of an extracted human third molar was ground to a thickness of about 30 um and polarized light micrographs were taken. The specimen was attached to a single hole grid and thinned by argon-ion bombardment at 15° incidence while rotating at 15 rpm. The beam current in each of two guns was 50 μA with an accelerating voltage of 4 kV. A 20 nm carbon coating was evaporated onto the specimen to prevent an electron charge from building up during electron microscopy.

Three-Dimensional Visualization of the T-System of Frog Muscle Using High Voltage Electron Microscopy and a Lanthanum Stain

1977 ◽  
Vol 35 ◽  
pp. 570-571 ◽  
Author(s):  
Lee D. Peachey ◽  
Clara Franzini-Armstrong
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Three Dimensional ◽  
Biological Tissues ◽  
High Voltage Electron Microscopy ◽  
Transverse Tubular System ◽  
Peroxidase Reaction ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
T System

The effective study of biological tissues in thick slices of embedded material by high voltage electron microscopy (HVEM) requires highly selective staining of those structures to be visualized so that they are not hidden or obscured by other structures in the image. A tilt pair of micrographs with subsequent stereoscopic viewing can be an important aid in three-dimensional visualization of these images, once an appropriate stain has been found. The peroxidase reaction has been used for this purpose in visualizing the T-system (transverse tubular system) of frog skeletal muscle by HVEM (1). We have found infiltration with lanthanum hydroxide to be particularly useful for three-dimensional visualization of certain aspects of the structure of the T- system in skeletal muscles of the frog. Specifically, lanthanum more completely fills the lumen of the tubules and is denser than the peroxidase reaction product.

Resolution, Contrast and Interpretation of HVEM Images of Crystals

1973 ◽  
Vol 31 ◽  
pp. 228-229
Author(s):  
L. E. Thomas ◽  
J. S. Lally ◽  
R. M. Fisher
Keyword(s):  
High Voltage ◽  
Chromatic Aberration ◽  
Crystalline Materials ◽  
Resolution Parameter ◽  
Instrument Resolution ◽  
Imaging Conditions ◽  
Beam Excitation ◽  
Optimum Imaging

In addition to improved penetration at high voltage, the characteristics of HVEM images of crystalline materials are changed markedly as a result of many-beam excitation effects. This leads to changes in optimum imaging conditions for dislocations, planar faults, precipitates and other features.Resolution - Because of longer focal lengths and correspondingly larger aberrations, the usual instrument resolution parameter, CS174 λ 374 changes by only a factor of 2 from 100 kV to 1 MV. Since 90% of this change occurs below 500 kV any improvement in “classical” resolution in the MVEM is insignificant. However, as is widely recognized, an improvement in resolution for “thick” specimens (i.e. more than 1000 Å) due to reduced chromatic aberration is very large.

Radiation-Induced Precipitation at Thin Foil Surfaces in Ni-Be Alloys

1982 ◽  
Vol 40 ◽  
pp. 598-599
Author(s):  
T. Mukai ◽  
T. E. Mitchell
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Electron Irradiation ◽  
High Vacuum ◽  
Thin Foil ◽  
Homogeneous Precipitation ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Radiation Induced

Radiation-induced homogeneous precipitation in Ni-Be alloys was recently observed by high voltage electron microscopy. A coupling of interstitial flux with solute Be atoms is responsible for the precipitation. The present investigation further shows that precipitation is also induced at thin foil surfaces by electron irradiation under a high vacuum.

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