Influence of post-stress effects on the dynamic hot-carrier degradation behavior of passivated n-channel MOSFET's

1992 ◽  
Vol 13 (7) ◽  
pp. 357-359 ◽  
Author(s):  
R. Bellens ◽  
E. de Schrijver ◽  
G. Groeseneken ◽  
P. Keremans ◽  
H.E. Maes
Keyword(s):  
Degradation Behavior ◽  
Hot Carrier ◽  
Stress Effects ◽  
Post Stress ◽  
Hot Carrier Degradation

Hot-carrier degradation behavior of thin-film SOI nMOSFET with isolation scheme and buried oxide thickness

2000 ◽  
Vol 47 (5) ◽  
pp. 1013-1017 ◽  
Author(s):  
Jong-Wook Lee ◽  
Hyung-Ki Kim ◽  
Woo-Han Lee ◽  
Min-Rok Oh ◽  
Yo-Hwan Koh
Keyword(s):  
Thin Film ◽  
Oxide Thickness ◽  
Degradation Behavior ◽  
Hot Carrier ◽  
Buried Oxide ◽  
Hot Carrier Degradation

Analysis of post-stress effects in passivated MOSFET's after hot-carrier stress.

1991 ◽  
Vol 15 (1-4) ◽  
pp. 437-440 ◽  
Author(s):  
E. de Schrijver ◽  
P. Heremans ◽  
R. Bellens ◽  
G. Groesenken ◽  
H.E. Maes
Keyword(s):  
Hot Carrier ◽  
Stress Effects ◽  
Hot Carrier Stress ◽  
Post Stress

Hot-carrier degradation behavior in body-contacted SOI nMOSFETs

2002 ◽  
Author(s):  
Ji-Woon Yang ◽  
Jong-Wook Lee ◽  
Won-Chang Lee ◽  
Min-Rok Oh ◽  
Yo-Hwan Koh
Keyword(s):  
Degradation Behavior ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Two-stage hot-carrier degradation behavior of 0.18μm 18V n-type DEMOS and its recovery effect

2009 ◽  
Vol 49 (1) ◽  
pp. 8-12 ◽  
Author(s):  
Chao Gao ◽  
Jun Wang ◽  
Lei Wang ◽  
Andrew Yap ◽  
Hong Li
Keyword(s):  
Degradation Behavior ◽  
Recovery Effect ◽  
Two Stage ◽  
Hot Carrier ◽  
Hot Carrier Degradation

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation
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