Optical signal distribution to MSM photodetector arrays via integrated polyimide waveguides

1997 ◽  
Vol 15 (9) ◽  
pp. 1700-1707 ◽  
Author(s):  
C.L. Callender ◽  
L. Robitaille ◽  
J.P. Noad ◽  
F. Gouin ◽  
C.A. Almeida
Keyword(s):  
Optical Signal ◽  
Signal Distribution ◽  
Msm Photodetector ◽  
Photodetector Arrays

High-speed 4x4 optoelectronic switch with on-chip optical signal distribution

1998 ◽  
Author(s):  
Carlos Almeida ◽  
Francois L. Gouin ◽  
Lucie Robitaille ◽  
Claire L. Callender ◽  
Julian P. Noad
Keyword(s):  
High Speed ◽  
Optical Signal ◽  
Signal Distribution ◽  
On Chip ◽  
Optoelectronic Switch

Optimization of metal-semiconductor-metal (MSM) photodetector arrays integrated with polyimide waveguides

1997 ◽  
Author(s):  
Claire L. Callender ◽  
Lucie Robitaille ◽  
Julian P. Noad ◽  
Francois L. Gouin ◽  
Carlos Almeida
Keyword(s):  
Metal Semiconductor Metal ◽  
Msm Photodetector ◽  
Photodetector Arrays

Planar Lightwave Integrated Circuits With Embedded Actives for Board and Substrate Level Optical Signal Distribution

2004 ◽  
Vol 27 (2) ◽  
pp. 376-385 ◽  
Author(s):  
N. Jokerst ◽  
T. Gaylord ◽  
E. Glytsis ◽  
M. Brooke ◽  
S. Cho ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Optical Signal ◽  
Signal Distribution ◽  
Substrate Level ◽  
Planar Lightwave

Photocurrent Enhancement between Two Coplanar Schottky-Barriers on Silicon MSM Photodetector

2013 ◽  
Vol 684 ◽  
pp. 265-268
Author(s):  
Narin Atiwongsangthong ◽  
Surasak Niemcharoen
Keyword(s):  
Optical Signal ◽  
Schottky Barriers ◽  
Visible Range ◽  
Avalanche Multiplication ◽  
Low Frequencies ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Noise Measurements ◽  
Signal Demodulation ◽  
Msm Photodetector

Gain properties of dc and ac photocurrent generated between two Schottky barriers coplanarly placed on silicon metal-semiconductor-metal photodetector have been investigated experimentally. The test structure has two square Mo/n-Si Schottky barrier junctions on an n-type silicon substrate with a resistivity of 9-12 Ω-cm and the junction internal separation is 20 m. The current-voltage (I-V) characteristics under illumination in visible range showed a rapid increase in the photocurrent at higher bias region. From the I-V characteristics and noise measurements, increase in photocurrent was ascribed to avalanche multiplication of carriers photogenerated in the reverse-biased Schottky junction. From observation of optical signal demodulation at low frequencies (10 kHz and 50 kHz), it was found that multiplication factor larger than 100 at 10 kHz and 30 at 50 kHz was achieved respectively.

Monolithic integration of metal-semiconductor-metal (MSM) photodetectors and optical waveguides: The use of polyimide waveguides for optical signal distribution

1996 ◽  
Vol 74 (S1) ◽  
pp. 43-46
Author(s):  
Lucie Robitaille ◽  
Claire L. Callender ◽  
Julian P. Noad
Keyword(s):  
Optical Properties ◽  
Optical Waveguides ◽  
Optical Signal ◽  
Monolithic Integration ◽  
Signal Distribution ◽  
Metal Semiconductor Metal ◽  
On Chip ◽  
Msm Photodetectors

Straight and curved polyimide waveguides have been fabricated for on-chip optical signal distribution. The optical properties of the structures at 633 and 830 nm are presented. The potential of polyimide waveguides for monolithic integration with GaAs MSM photodetectors is discussed.

Photodetector arrays and architectures for acousto-optical signal processing

1990 ◽  
Vol 29 (1) ◽  
pp. 58 ◽  
Author(s):  
Gordon W. Anderson ◽  
Francis J. Kub ◽  
Gerald M. Borsuk
Keyword(s):  
Signal Processing ◽  
Optical Signal Processing ◽  
Optical Signal ◽  
Photodetector Arrays
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