Monolithic integration of metal-semiconductor-metal (MSM) photodetectors and optical waveguides: The use of polyimide waveguides for optical signal distribution

1996 ◽  
Vol 74 (S1) ◽  
pp. 43-46
Author(s):  
Lucie Robitaille ◽  
Claire L. Callender ◽  
Julian P. Noad
Keyword(s):  
Optical Properties ◽  
Optical Waveguides ◽  
Optical Signal ◽  
Monolithic Integration ◽  
Signal Distribution ◽  
Metal Semiconductor Metal ◽  
On Chip ◽  
Msm Photodetectors

Straight and curved polyimide waveguides have been fabricated for on-chip optical signal distribution. The optical properties of the structures at 633 and 830 nm are presented. The potential of polyimide waveguides for monolithic integration with GaAs MSM photodetectors is discussed.

High-speed 4x4 optoelectronic switch with on-chip optical signal distribution

1998 ◽  
Author(s):  
Carlos Almeida ◽  
Francois L. Gouin ◽  
Lucie Robitaille ◽  
Claire L. Callender ◽  
Julian P. Noad
Keyword(s):  
High Speed ◽  
Optical Signal ◽  
Signal Distribution ◽  
On Chip ◽  
Optoelectronic Switch

scholarly journals Metal-semiconductor-metal (MSM) photodetectors with plasmonic nanogratings*

2011 ◽  
Vol 83 (11) ◽  
pp. 2107-2113 ◽  
Author(s):  
Narottam Das ◽  
Ayman Karar ◽  
Chee Leong Tan ◽  
Mikhail Vasiliev ◽  
Kamal Alameh ◽  
...  
Keyword(s):  
Light Absorption ◽  
Enhancement Factor ◽  
Signal Propagation ◽  
Optical Signal ◽  
Fdtd Simulation ◽  
Absorption Enhancement ◽  
Metal Semiconductor Metal ◽  
Simulation Results ◽  
Msm Photodetectors ◽  
Difference Time

We discuss the light absorption enhancement factor dependence on the design of nanogratings inscribed into metal-semiconductor-metal photodetector (MSM-PD) structures. These devices are optimized geometrically, leading to light absorption improvement through plasmon-assisted effects. Finite-difference time-domain (FDTD) simulation results show ~50 times light absorption enhancement for 850 nm light due to improved optical signal propagation through the nanogratings. Also, we show that the light absorption enhancement is strongly dependent on the nanograting shapes in MSM-PDs.

Polymeric Strip Waveguides and their Connection to Very Thin Ultrafast Metal-Semiconductor-Metal Detectors

1999 ◽  
Vol 597 ◽  
Author(s):  
Ch. Buchal ◽  
A. Roelofs ◽  
M. Siegert ◽  
M. Löken
Keyword(s):  
Optical Fibers ◽  
Optical Waveguides ◽  
Ion Beam ◽  
Beam Propagation Method ◽  
Computer Code ◽  
Schottky Contacts ◽  
Ion Beam Etching ◽  
Metal Semiconductor Metal ◽  
Metal Detectors ◽  
Msm Photodetectors

AbstractWe present data on the fabrication process of optical waveguides from four different polymers, which have been patterned either by standard lithographical masking and reactive ion beam etching (RIE) or by direct lithographical exposure of photosensitive material. Three of the resists were directly photosensitive, they could be exposed and developed. Thereafter they can be cured and remain stable. Waveguide losses of 3.5 dB/cm had to be accepted for the photosensitive materials, while the non-sensitive polymers formed very good guides (0.8 dB/cm), but were more difficult to process. We demonstrate the coupling of the strip waveguides to optical fibers on one side and to very thin metal-semiconductor-metal (MSM) photodetectors at the other side. A beam propagation method computer code has been used to evaluate the best coupling efficiencies between the guides and the detectors, which are ultrafast (3.5 ps FWHM) due to their very thin silicon slab design (Si thickness 400 nm, sandwiched between two Schottky contacts).

Fabrication And Characterization Of Polyimide Waveguides For Optical Interconnection

1995 ◽  
Vol 413 ◽  
Author(s):  
L. Robitaille ◽  
C. L. Callender ◽  
J. P. Noad
Keyword(s):  
Integrated Circuits ◽  
Optical Signal ◽  
Radius Of Curvature ◽  
Optical Interconnection ◽  
Low Loss ◽  
Signal Distribution ◽  
Optoelectronic Integrated Circuits ◽  
Fabrication And Characterization ◽  
On Chip

ABSTRACTThis paper reports the fabrication and characterization of polyimide branching waveguides for on-chip optical signal distribution in GaAs-based optoelectronic integrated circuits (OEICs). Low-loss polyimide s-bends and splitters with good splitting ratios and angles considerably larger than similar structures made from inorganic (e.g. LiNbO3) and semiconductor (e.g. GaAs, InP) materials, have been successfully fabricated and tested. The effects of the radius of curvature, splitter angle and cladding materials on the optical losses are discussed.

An all optical photonic crystal half adder suitable for optical processing applications

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Hamed Azhdari ◽  
Sahel Javahernia
Keyword(s):  
Photonic Crystal ◽  
Optical Waveguides ◽  
High Speed ◽  
Building Blocks ◽  
Optical Signal ◽  
Ring Resonators ◽  
Optical Processing ◽  
Nonlinear Photonic Crystal ◽  
Half Adder ◽  
All Optical

Abstract Increasing the speed of operation in all optical signal processing is very important. For reaching this goal one needs high speed optical devices. Optical half adders are one of the important building blocks required in optical processing. In this paper an optical half adder was proposed by combining nonlinear photonic crystal ring resonators with optical waveguides. Finite difference time domain method wase used for simulating the final structure. The simulation results confirmed that the rise time for the proposed structure is about 1 ps.

All-nanoparticle layer-by-layer coatings for Mid-IR on-chip gas sensing

2020 ◽  
Vol 56 (91) ◽  
pp. 14283-14286
Author(s):  
Diana Al Husseini ◽  
Junchao Zhou ◽  
Daniel Willhelm ◽  
Trevor Hastings ◽  
Gregory S. Day ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Gas Sensing ◽  
Layer By Layer ◽  
Precise Control ◽  
Nanoparticle Layer ◽  
Withdrawal Speed ◽  
Layer Deposition ◽  
Nanoparticle Coatings ◽  
On Chip

Functionalization of optical waveguides with submicron all-nanoparticle coatings significantly enhanced the detection of acetone. Such coatings were enabled via precise control of the substrate withdrawal speed using the layer-by-layer deposition.

Monolithic integration of poly(dimethylsiloxane) waveguides and microfluidics for on-chip absorbance measurements

2008 ◽  
Vol 134 (2) ◽  
pp. 532-538 ◽  
Author(s):  
Jack Sheng Kee ◽  
Daniel Puiu Poenar ◽  
Pavel Neuzil ◽  
Levent Yobas
Keyword(s):  
Monolithic Integration ◽  
On Chip

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

scholarly journals Six-port optical switch for cluster-mesh photonic network-on-chip

Nanophotonics ◽  
2018 ◽  
Vol 7 (5) ◽  
pp. 827-835 ◽  
Author(s):  
Hao Jia ◽  
Ting Zhou ◽  
Yunchou Zhao ◽  
Yuhao Xia ◽  
Jincheng Dai ◽  
...  
Keyword(s):  
High Performance ◽  
Optical Switching ◽  
Optical Switch ◽  
Optical Signal ◽  
Network On Chip ◽  
Transmission Experiment ◽  
Photonic Network ◽  
Benes Network ◽  
On Chip ◽  
Spectral Responses

AbstractPhotonic network-on-chip for high-performance multi-core processors has attracted substantial interest in recent years as it offers a systematic method to meet the demand of large bandwidth, low latency and low power dissipation. In this paper we demonstrate a non-blocking six-port optical switch for cluster-mesh photonic network-on-chip. The architecture is constructed by substituting three optical switching units of typical Spanke-Benes network to optical waveguide crossings. Compared with Spanke-Benes network, the number of optical switching units is reduced by 20%, while the connectivity of routing path is maintained. By this way the footprint and power consumption can be reduced at the expense of sacrificing the network latency performance in some cases. The device is realized by 12 thermally tuned silicon Mach-Zehnder optical switching units. Its theoretical spectral responses are evaluated by establishing a numerical model. The experimental spectral responses are also characterized, which indicates that the optical signal-to-noise ratios of the optical switch are larger than 13.5 dB in the wavelength range from 1525 nm to 1565 nm. Data transmission experiment with the data rate of 32 Gbps is implemented for each optical link.

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