The future of power semiconductor device technology

B.J. Baliga

doi:10.1109/5.931471

The future of power semiconductor device technology

Proceedings of the IEEE ◽

10.1109/5.931471 ◽

2001 ◽

Vol 89 (6) ◽

pp. 822-832 ◽

Cited By ~ 101

Author(s):

B.J. Baliga

Keyword(s):

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

The Future ◽

Device Technology

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Monitoring of carrier lifetime distribution in high power semiconductor device technology

Microelectronics Journal ◽

10.1016/j.mejo.2007.11.015 ◽

2008 ◽

Vol 39 (6) ◽

pp. 884-889

Author(s):

J. Kozisek ◽

Z. Machacek ◽

V. Benda

Keyword(s):

High Power ◽

Carrier Lifetime ◽

Semiconductor Device ◽

Lifetime Distribution ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Device Technology

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An investigation of the IGBT gate driving conditions employing an equivalent circuit model of power semiconductor device

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) ◽

10.23919/epe17ecceeurope.2017.8099165 ◽

2017 ◽

Author(s):

Hirofumi Uemura ◽

Daichi Yoshida ◽

Hiroyuki Matsumoto ◽

Hisashi Fujimoto ◽

Yasuhiro Okuma

Keyword(s):

Equivalent Circuit ◽

Semiconductor Device ◽

Equivalent Circuit Model ◽

Circuit Model ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Driving Conditions ◽

Gate Driving

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Fundamentals and the Future of Semiconductor Device Technology

III-V Compound Semiconductors ◽

10.1201/b10390-5 ◽

2016 ◽

pp. 13-60

Keyword(s):

Semiconductor Device ◽

The Future ◽

Device Technology

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Status and trends of power semiconductor device models for circuit simulation

IEEE Transactions on Power Electronics ◽

10.1109/63.668107 ◽

1998 ◽

Vol 13 (3) ◽

pp. 452-465 ◽

Cited By ~ 83

Author(s):

R. Kraus ◽

H.J. Mattausch

Keyword(s):

Semiconductor Device ◽

Circuit Simulation ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Status And Trends

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Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_240 ◽

2014 ◽

pp. 929-932

Author(s):

M. R. Jennings ◽

C. A. Fisher ◽

S. M. Thomas ◽

Y. Sharma ◽

D. Walker ◽

...

Keyword(s):

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Device Applications

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Clustered insulated gate bipolar transistor: a new power semiconductor device

IEE Proceedings - Circuits Devices and Systems ◽

10.1049/ip-cds:20010168 ◽

2001 ◽

Vol 148 (2) ◽

pp. 75 ◽

Cited By ~ 9

Author(s):

M. Sweet ◽

O. Spulber ◽

J.V. Subhas Chandra Bose ◽

L. Ngwendson ◽

K.V. Vershinin ◽

...

Keyword(s):

Semiconductor Device ◽

Bipolar Transistor ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Insulated Gate Bipolar Transistor

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Reliability odometer of power semiconductor device used for high performance high power amplifiers

2016 IEEE Energy Conversion Congress and Exposition (ECCE) ◽

10.1109/ecce.2016.7855389 ◽

2016 ◽

Cited By ~ 2

Author(s):

Fei Xu ◽

Juan Sabate ◽

Xi Lu ◽

Ruxi Wang ◽

Lou Frigo ◽

...

Keyword(s):

High Power ◽

Power Amplifiers ◽

High Performance ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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High-power semiconductor device: a symmetric gate commutated turn-off thyristor

IEE Proceedings - Electric Power Applications ◽

10.1049/ip-epa:20010435 ◽

2001 ◽

Vol 148 (4) ◽

pp. 363 ◽

Cited By ~ 16

Author(s):

H. Iwamoto ◽

K. Satoh ◽

M. Yamamoto ◽

A. Kawakami

Keyword(s):

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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A Pseudo Two-Dimensional Threshold Voltage Model for Low-Power Semiconductor Device PNIN Double-Gate-Tunneling Field Effect Transistor

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2016.5438 ◽

2016 ◽

Vol 13 (8) ◽

pp. 5454-5457

Author(s):

Hao Zhao-Ming ◽

Li Yu-Chen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Semiconductor Device ◽

Double Gate ◽

Two Dimensional ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Effect Transistor ◽

Threshold Voltage Model

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The integrated Emitter Turn-off Thyristor (IETO) - an innovative thyristor based high power semiconductor device using MOS assisted turn-off

2010 IEEE Energy Conversion Congress and Exposition ◽

10.1109/ecce.2010.5618410 ◽

2010 ◽

Cited By ~ 3

Author(s):

Michael Bragard ◽

Marcus Conrad ◽

Rik W. De Doncker

Keyword(s):

High Power ◽

Semiconductor Device ◽

Power Semiconductor Device ◽

Power Semiconductor

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