Improved universal MOSFET electron mobility degradation models for circuit simulation

1993 ◽  
Vol 12 (10) ◽  
pp. 1542-1546 ◽  
Author(s):  
C. Yue ◽  
V.M. Agostinelli ◽  
G.M. Yeric ◽  
A.F. Tasch
Keyword(s):  
Electron Mobility ◽  
Circuit Simulation ◽  
Mobility Degradation ◽  
Degradation Models

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

2013 ◽  
Vol 740-742 ◽  
pp. 533-536 ◽  
Author(s):  
Viktoryia Uhnevionak ◽  
Christian Strenger ◽  
Alex Burenkov ◽  
Vincent Mortet ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Fixed Charge ◽  
Interface Traps ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Mobility Degradation ◽  
Current Voltage ◽  
Degradation Models ◽  
Electrical Data

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.

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