Spatial mode structure of index-guided broad-area quantum-well lasers

1990 ◽  
Vol 26 (10) ◽  
pp. 1713-1716 ◽  
Author(s):  
C.J. Chang-Hasnain ◽  
E. Kapon ◽  
E. Colas
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Spatial Mode ◽  
Mode Structure ◽  
Broad Area

Spatial mode structure of broad‐area semiconductor quantum well lasers

1989 ◽  
Vol 54 (3) ◽  
pp. 205-207 ◽  
Author(s):  
C. J. Chang‐Hasnain ◽  
E. Kapon ◽  
R. Bhat
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Spatial Mode ◽  
Mode Structure ◽  
Broad Area ◽  
Semiconductor Quantum Well

High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200nm range

2010 ◽  
Vol 50 (5) ◽  
pp. 722-725 ◽  
Author(s):  
Hung-Pin D. Yang ◽  
Chih-Tsung Shih ◽  
Su-Mei Yang ◽  
Tsin-Dong Lee
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Broad Area

Characterization of InGaAs/InGaAsP broad-area quantum well lasers

1990 ◽  
Author(s):  
Gerhard Weiser ◽  
Klaus Satzke ◽  
H. G. Vestner ◽  
L. Goldstein ◽  
A. Perales
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Broad Area

Broad-Area InGaAs/AlGaAs Quantum-Well Lasers with High Efficiencies

1996 ◽  
Author(s):  
J. Heerlein ◽  
G. Jost ◽  
J. Joos ◽  
S. Morgott ◽  
G. Reiner ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Broad Area

A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yongkun Sin ◽  
Nathan Presser ◽  
Neil Ives ◽  
Steven C. Moss
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Deep Level ◽  
Quantum Well Lasers ◽  
Broad Area ◽  
Dark Line ◽  
Time Resolved ◽  
Transient Spectroscopy ◽  
Strained Quantum Well ◽  
Broad Area Lasers

AbstractDegradation processes in high power broad-area InGaAs-AlGaAs strained quantum well lasers were studied using electron beam-induced current (EBIC) techniques, time-resolved electroluminescence (TR-EL) techniques, and deep-level transient spectroscopy (DLTS). Accelerated lifetests of the broad-area lasers yielded catastrophic failures at the front facet and also in the bulk. EBIC was employed to study dark line defects generated in degraded lasers stressed under different test conditions. TR-EL was employed to study the intra-cavity intensity distribution in real time as devices were aged. DLTS was employed to study deep electron traps in both pristine and degraded laser diodes. Lastly, we present a possible scenario for the initiation of bulk degradation in the broad-area lasers.

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