Near 10 μm intervalence subband optical transitions in p-type In/sub 0.49/Ga/sub 0.51/P-GaAs quantum well structures

1996 ◽  
Vol 32 (3) ◽  
pp. 471-477 ◽  
Author(s):  
H.H. Chen ◽  
Yeong-Her Wang ◽  
Mau-Phon Houng
2005 ◽  
Vol 490 (2) ◽  
pp. 161-164 ◽  
Author(s):  
A. Caballero-Rosas ◽  
C. Mejía-García ◽  
G. Contreras-Puente ◽  
M. López-López

2001 ◽  
Vol 89 (9) ◽  
pp. 4951-4954 ◽  
Author(s):  
Lun Dai ◽  
Bei Zhang ◽  
J. Y. Lin ◽  
H. X. Jiang

Author(s):  
Omer Donmez ◽  
Ayse Erol ◽  
Çağlar Çetinkaya ◽  
Erman Çokduygulular ◽  
Mustafa Aydın ◽  
...  

1991 ◽  
Vol 220 ◽  
Author(s):  
M. Jaros ◽  
R. J. Turton ◽  
K. B. Wong

ABSTRACTWe show that the infinite Si-Ge superlattices predicted to exhibit strong optical transitions across the fundamental gap and between conduction subbands also give rise to significant optical nonlinearities. Efficient optical transitions can also be achieved in finite-length structures grown on Si or Ge substrates. However, the zone folding argument does not apply and the electronic structure strongly reflects the finite length of such systems.


1999 ◽  
Vol 607 ◽  
Author(s):  
W. Shi ◽  
D. H. Zhang ◽  
T. Osotchan ◽  
P.H. Zhang ◽  
S. F. Yoon ◽  
...  

AbstractBe-doped InGaAs/AIGaAs multiple quantum well (MQW) structures, grown by solid-source molecular beam epitaxy with different doping concentration in the wells, were investigated by xray diffraction and transmission electron microscopy (TEM). Some features have been observed. (1) The MQW mean mismatch increases from 1.176 × 10−3 to 1.195 × 10−3 and 1.29 × 10−3 for the structures with doping concentration of 1 × 1017 cm−3, 1 × 1018cm−3and 2 × 1019 cm−3 in the wells, respectively. (2) The period of the MQW also increases with doping density. (3) The intensity of the first order satellite in the rocking curves decreases as the Be concentration is increased, indicating that indium diffusion in the heavily doped wells is likely more significant than that in the lightly doped ones. (4) The full width at half maximum of the zero-order satellite peak becomes widened as doping concentration increases, indicating that high Be-doping in the well likely deteriorates the interfaces of the multiple quantum well stacks. In addition, TEM measurement is conducted and clear pictures on well and barrier layers of the structures are observed. The information obtained is of great value for the design of p-doped quantum well infrared photodetectors.


2014 ◽  
Vol 9 (1) ◽  
pp. 141 ◽  
Author(s):  
Ömer Dönmez ◽  
Fahrettin Sarcan ◽  
Ayse Erol ◽  
Mustafa Gunes ◽  
Mehmet Arikan ◽  
...  

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