Influence of the annealing temperature on the optical transitions of InGaAsP-based quantum well structures investigated by photoreflectance spectroscopy

2005 ◽  
Vol 202 (7) ◽  
pp. 1263-1269 ◽  
Author(s):  
A. Podhorodecki ◽  
R. Kudrawiec ◽  
J. Andrzejewski ◽  
J. Misiewicz ◽  
J. Wojcik ◽  
...  
Keyword(s):  
Quantum Well ◽  
Annealing Temperature ◽  
Optical Transitions ◽  
Quantum Well Structures ◽  
Photoreflectance Spectroscopy

Near-field photoreflectance spectroscopy of quantum well structures

2001 ◽  
Vol 78 (16) ◽  
pp. 2306-2308
Author(s):  
Yong-Hoon Cho ◽  
Dai-Sik Kim ◽  
Wonho Jhe
Keyword(s):  
Quantum Well ◽  
Near Field ◽  
Quantum Well Structures ◽  
Photoreflectance Spectroscopy

Temperature dependence of optical transitions in AlxGa1–xAs/GaAs quantum well structures grown by molecular beam epitaxy

2005 ◽  
Vol 490 (2) ◽  
pp. 161-164 ◽  
Author(s):  
A. Caballero-Rosas ◽  
C. Mejía-García ◽  
G. Contreras-Puente ◽  
M. López-López
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Optical Transitions ◽  
Quantum Well Structures

Comparison of optical transitions in InGaN quantum well structures and microdisks

2001 ◽  
Vol 89 (9) ◽  
pp. 4951-4954 ◽  
Author(s):  
Lun Dai ◽  
Bei Zhang ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Quantum Well ◽  
Optical Transitions ◽  
Quantum Well Structures

Wave Function Engineering of Linear and Non-Linear Optical Response in Si-Ge Quantum Well Structures and Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
M. Jaros ◽  
R. J. Turton ◽  
K. B. Wong
Keyword(s):  
Wave Function ◽  
Electronic Structure ◽  
Quantum Well ◽  
Finite Length ◽  
Optical Response ◽  
Optical Nonlinearities ◽  
Optical Transitions ◽  
Quantum Well Structures ◽  
Non Linear ◽  
Zone Folding

ABSTRACTWe show that the infinite Si-Ge superlattices predicted to exhibit strong optical transitions across the fundamental gap and between conduction subbands also give rise to significant optical nonlinearities. Efficient optical transitions can also be achieved in finite-length structures grown on Si or Ge substrates. However, the zone folding argument does not apply and the electronic structure strongly reflects the finite length of such systems.

Photoreflectance spectroscopy as a powerful tool for the investigation of GaN–AlGaN quantum well structures

1999 ◽  
Vol 109 (9) ◽  
pp. 567-571 ◽  
Author(s):  
T.J Ochalski ◽  
B Gil ◽  
P Lefebvre ◽  
N Grandjean ◽  
J Massies ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Photoreflectance Spectroscopy

Subband Optical Transitions in a-Si:H Quantum Well Structures

1991 ◽  
Vol 8 (8) ◽  
pp. 432-435 ◽  
Author(s):  
Chen Kunji ◽  
Xu Jun ◽  
Zhou Lin ◽  
Jiang Jiangong ◽  
Li Zhifeng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Transitions ◽  
Quantum Well Structures

Thermal Stability Of SiGe/Si Quantum Well Structures Grown By APCVD

1998 ◽  
Vol 533 ◽  
Author(s):  
Q. X. Zhao ◽  
O. Nur ◽  
U. Södervall ◽  
C. J. Patel ◽  
M. Willandera ◽  
...  
Keyword(s):  
Quantum Well ◽  
Atmospheric Pressure ◽  
Annealing Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Quantum Well Structures ◽  
Pressure Chemical ◽  
Different Temperatures ◽  
Secondary Ion ◽  
Thermal Stability Of

AbstractSingle and double Si1-xGexx/Si quantum well (QW) structures, which were grown by atmospheric pressure chemical vapor deposition (APCVD), are characterized by photoluminescence and secondary ion mass spectrometry. Systematic post-growth annealing treatments were carried out at temperatures between 600°C and 1100°C in pure N2 ambient. The interdiffusion between the Si layer and the Si1-xGex, well layers occurs at the annealing temperature around 900°C. The diffusion coefficient is deduced at different temperatures from SIMS measurements for single QW structures. The activation energy is about 3.9 eV in the temperature range between 950°C and 1100°C. The double QW structures show a similar value, but the accurate value is more difficult to obtain because it is more complicated to analyze the SIMS profile of the double QW structures. The intensity of the exciton recombination related to carriers confined in the double QW structures decreases with increasing annealing temperatures and becomes strongly suppressed at 750°C. When the annealing temperature is increased further, the intensity of the QW emission recovers. The results indicate that nonradiative centers were generated at annealing temperature of about 750°C

Characterization of Ge/SiGe strained-barrier quantum-well structures using photoreflectance spectroscopy

1994 ◽  
Vol 49 (11) ◽  
pp. 7394-7399 ◽  
Author(s):  
H. Yaguchi ◽  
K. Tai ◽  
K. Takemasa ◽  
K. Onabe ◽  
R. Ito ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Photoreflectance Spectroscopy
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