Comparison of optical transitions in InGaN quantum well structures and microdisks

2001 ◽  
Vol 89 (9) ◽  
pp. 4951-4954 ◽  
Author(s):  
Lun Dai ◽  
Bei Zhang ◽  
J. Y. Lin ◽  
H. X. Jiang
2005 ◽  
Vol 490 (2) ◽  
pp. 161-164 ◽  
Author(s):  
A. Caballero-Rosas ◽  
C. Mejía-García ◽  
G. Contreras-Puente ◽  
M. López-López

1991 ◽  
Vol 220 ◽  
Author(s):  
M. Jaros ◽  
R. J. Turton ◽  
K. B. Wong

ABSTRACTWe show that the infinite Si-Ge superlattices predicted to exhibit strong optical transitions across the fundamental gap and between conduction subbands also give rise to significant optical nonlinearities. Efficient optical transitions can also be achieved in finite-length structures grown on Si or Ge substrates. However, the zone folding argument does not apply and the electronic structure strongly reflects the finite length of such systems.


1991 ◽  
Vol 8 (8) ◽  
pp. 432-435 ◽  
Author(s):  
Chen Kunji ◽  
Xu Jun ◽  
Zhou Lin ◽  
Jiang Jiangong ◽  
Li Zhifeng ◽  
...  

2016 ◽  
Vol 76 ◽  
pp. 140-145 ◽  
Author(s):  
V. Kladko ◽  
A. Kuchuk ◽  
А. Naumov ◽  
N. Safriuk ◽  
O. Kolomys ◽  
...  

2010 ◽  
Vol 518 (7) ◽  
pp. 1825-1829 ◽  
Author(s):  
C. Mejía-García ◽  
A. Caballero-Rosas ◽  
M. López-López ◽  
A. Winter ◽  
H. Pascher ◽  
...  

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