Uniform linear arrays of strained-layer InGaAs-AlGaAs quantum-well ridge-waveguide diode lasers fabricated by ECR-IBAE

1995 ◽  
Vol 31 (8) ◽  
pp. 1357-1363 ◽  
Author(s):  
J.D. Woodhouse ◽  
C.A. Wang ◽  
J.P. Donnelly ◽  
D.Z. Tsang ◽  
R.J. Bailey ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Ridge Waveguide ◽  
Linear Arrays ◽  
Strained Layer

Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm)

1987 ◽  
Vol 50 (12) ◽  
pp. 714-716 ◽  
Author(s):  
S. E. Fischer ◽  
D. Fekete ◽  
G. B. Feak ◽  
J. M. Ballantyne
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Injection Laser ◽  
Strained Layer

Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser

1992 ◽  
Vol 4 (4) ◽  
pp. 296-299 ◽  
Author(s):  
L.M. Miller ◽  
K.J. Beernink ◽  
J.T. Verdeyen ◽  
J.J. Coleman ◽  
J.S. Hughes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Distributed Feedback ◽  
Strained Layer ◽  
Heterostructure Laser

High-power, high-temperature InGaAs-AlGaAs strained-layer quantum-well diode lasers

1994 ◽  
Vol 30 (8) ◽  
pp. 646-648 ◽  
Author(s):  
C.A. Wang ◽  
H.K. Choi ◽  
W.W. Chow ◽  
J.N. Walpole ◽  
C.T. Fuller ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Strained Layer

2.3–2.7µm InGaAsSb/AlGaAsSb Broad-Contact and Single-Mode Ridge-Waveguide SCH-QW Diode Lasers Operating in CW Regime at Room Temperature

1999 ◽  
Vol 607 ◽  
Author(s):  
D. Garbuzov ◽  
H. Lee
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Current Density ◽  
Room Temperature ◽  
Diode Lasers ◽  
Single Mode ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Ridge Waveguide ◽  
Longitudinal Modes

AbstractA new approach in the design of (Al)InGaAsSb/GaSb quantum well separate confinement heterostructure (QW-SCH) diode lasers has led to CW room-temperature lasing up to 2.7 gm. To avoid QW material degradation associated with the miscibility gap in the 2.3–2.7 tim wavelength range, we used highly strained, “quasi-ternary” InxGa1−xSbl−yAsy compounds with 0.25<x<0.38 and y<0.07 as the material for QWs. Very low threshold current density (∼300 A/cm2) and high CW output powers (>100 mW) were obtained from broad contact devices operating in the 2.3–2.6 μm wavelength range. From the spontaneous emission measurements we have identified that the Auger process determines the rate of recombination in quantum well active region over the entire temperature range studied (15– 110 'C) for 2.6 gim lasers and only at temperatures higher than 65 'C for 2.3 pim lasers. If Auger recombination dominates, strong temperature dependence of Auger coefficient leads to the rapid increase of threshold current density with temperature (To ∼40 °C). In the range of 15 – 65 °C for 2.3 gim devicesa monomolecular, non-radiative mechanism dominates and To is about 110 °C. In addition, single-mode CW room temperature ridge-waveguide lasers with wavelength of 2.3-2.55 gim have been fabricated for the first time. The lasers display threshold currents around 50 mA with CW output powers of several milliwatts. Since for a certain range of temperatures and currents one of the longitudinal modes dominates in the spectra of the ridge lasers they have been successfully applied forgas spectroscopy.

InAsSb/InAlAsSb Quantum-Well Diode Lasers Emitting Between 3 and 4 μm

1996 ◽  
Vol 450 ◽  
Author(s):  
G. W. Turner ◽  
H. K. Choi ◽  
M. J. Manfra ◽  
M. K. Connors
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Operating Temperature ◽  
Diode Lasers ◽  
Threshold Current ◽  
Ridge Waveguide ◽  
Pollution Monitoring ◽  
Type I ◽  
Waveguide Lasers ◽  
Ridge Waveguide Lasers

ABSTRACTRecently, mid-infrared diode lasers fabricated from the antimonide-based III-V compounds have been receiving increased attention for potential applications in trace gas detection, spectroscopy, pollution monitoring, and military systems. In this paper we will report the growth, fabrication, and modeling of high performance diode lasers with wavelengths longer than 3 μm. Molecular beam epitaxy (MBE) has been employed for the growth of these Type-I, strained quantum-well (QW) laser structures on GaSb and InAs substrates. The lasers consist of compressively strained InAsSb wells, tensile-strained InAlAsSb barriers, and lattice-matched AlAsSb cladding layers. QW lasers grown on GaSb substrates, with emission wavelengths of ∼3.9 μm, have operated pulsed up to 165 K. At 80 K, cw power of 30 mW/Facet has been obtained. Ridge-waveguide lasers have operated cw up to 128K. QW lasers grown on InAs substrates have emission wavelengths between 3.2 and 3.55 μm. Broad-stripe lasers on InAs have exhibited cw power of 215 mW/facet at 80 K, pulsed threshold current density as low as 30 A/cm2 at 80 K, characteristic temperatures (TO) between 30 and 40 K, and maximum pulsed operating temperature of 225 K. Ridge-waveguide lasers on InAs have cw threshold current of 12 mA at 100 K, and a maximum cw operating temperature of 175 K. In this paper we will present some of the key issues regarding the MBE growth, fabrication, and modeling of such lasers and discuss future directions for improved device performance.

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