Determination of active-region leakage currents in ridge-waveguide strained-layer quantum-well lasers by varying the ridge width

G.J. Letal; J.G. Simmons; J.D. Evans; G.P. Li

doi:10.1109/3.661460

Determination of active-region leakage currents in ridge-waveguide strained-layer quantum-well lasers by varying the ridge width

IEEE Journal of Quantum Electronics ◽

10.1109/3.661460 ◽

1998 ◽

Vol 34 (3) ◽

pp. 512-518 ◽

Cited By ~ 28

Author(s):

G.J. Letal ◽

J.G. Simmons ◽

J.D. Evans ◽

G.P. Li

Keyword(s):

Active Region ◽

Quantum Well ◽

Ridge Waveguide ◽

Quantum Well Lasers ◽

Leakage Currents ◽

Strained Layer ◽

Ridge Width

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Experimental determination of the carrier dependence of differential gain, refractive index, and linewidth enhancement factor in strained-layer quantum well lasers

10.1364/ofc.1990.wj4 ◽

1990 ◽

Author(s):

J. LACOURSE ◽

B. YU ◽

W. RIDEOUT ◽

P. K. YORK ◽

K. J. BEERNINK ◽

...

Keyword(s):

Refractive Index ◽

Quantum Well ◽

Experimental Determination ◽

Enhancement Factor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Linewidth Enhancement Factor ◽

Differential Gain ◽

Linewidth Enhancement

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Low‐threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure

Journal of Applied Physics ◽

10.1063/1.347473 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7892-7894 ◽

Cited By ~ 12

Author(s):

C. P. Chao ◽

S. Y. Hu ◽

K‐K. Law ◽

B. Young ◽

J. L. Merz ◽

...

Keyword(s):

Quantum Well ◽

Ridge Waveguide ◽

Waveguide Structure ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Low Threshold ◽

Ridge Waveguide Structure

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Growth and characterization of low threshold, continuous-wave-operated ridge waveguide strained layer InGaAs/GaAs single-quantum-well lasers

Materials Science and Engineering B ◽

10.1016/0921-5107(91)90200-f ◽

1991 ◽

Vol 9 (1-3) ◽

pp. 351-354 ◽

Cited By ~ 1

Author(s):

B. Saint-Cricq ◽

S. Bonnefont ◽

F. Lozes-Dupuy ◽

H. Martinot ◽

R. Azoulay ◽

...

Keyword(s):

Quantum Well ◽

Continuous Wave ◽

Ridge Waveguide ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Low Threshold

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High‐speed modulation of strained‐layer InGaAs‐GaAs‐AlGaAs ridge waveguide multiple quantum well lasers

Applied Physics Letters ◽

10.1063/1.104914 ◽

1991 ◽

Vol 58 (21) ◽

pp. 2336-2338 ◽

Cited By ~ 29

Author(s):

S. D. Offsey ◽

L. F. Lester ◽

W. J. Schaff ◽

L. F. Eastman

Keyword(s):

Quantum Well ◽

High Speed ◽

Multiple Quantum Well ◽

Ridge Waveguide ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

Speed Modulation ◽

High Speed Modulation

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High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

Microwave and Optical Technology Letters ◽

10.1002/mop.4650070313 ◽

1994 ◽

Vol 7 (3) ◽

pp. 139-143 ◽

Cited By ~ 1

Author(s):

Tetsuro Ijichi ◽

Michio Ohkubo ◽

Akira Iketani ◽

Toshio Kikuta

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Strained Layer

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Self-consistent approach for the determination of effective differential gain and effective capture time in multiple-quantum-well lasers

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics ◽

10.1109/cleo.1997.603072 ◽

2005 ◽

Author(s):

A.G. Plyavenek ◽

A.V. Lyubarskii

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Differential Gain ◽

Capture Time ◽

Self Consistent ◽

Consistent Approach

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Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.6569 ◽

1998 ◽

Vol 37 (Part 1, No. 12A) ◽

pp. 6569-6574 ◽

Cited By ~ 6

Author(s):

Munehisa Tamura ◽

Takashi Kojima ◽

Toshikazu Ando ◽

Nobuhiro Nunoya ◽

Shigeo Tamura ◽

...

Keyword(s):

Active Region ◽

Quantum Well ◽

Vapor Phase ◽

Chemical Etching ◽

Quantum Well Lasers ◽

Epitaxial Regrowth ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Recombination Velocity ◽

Metallic Vapor

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Experimental Determination of the Intraband Relaxation Time in Strained Quantum Well Lasers

Hot Carriers in Semiconductors ◽

10.1007/978-1-4613-0401-2_135 ◽

1996 ◽

pp. 591-593 ◽

Cited By ~ 1

Author(s):

M. Zimmermann ◽

S. Krämer ◽

F. Steinhagen ◽

H. Hillmer ◽

H. Burkhard ◽

...

Keyword(s):

Relaxation Time ◽

Quantum Well ◽

Experimental Determination ◽

Quantum Well Lasers ◽

Intraband Relaxation ◽

Strained Quantum Well

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Power penalty in 1.3-μm InP-based strained-layer multiple-quantum-well lasers at elevated temperatures

IEEE Photonics Technology Letters ◽

10.1109/68.618478 ◽

1997 ◽

Vol 9 (9) ◽

pp. 1205-1207 ◽

Cited By ~ 10

Author(s):

S. Seki ◽

K. Yokoyama

Keyword(s):

Quantum Well ◽

Elevated Temperatures ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Power Penalty ◽

Strained Layer

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Threshold current reduction of GaInAs/GaInAsP/InP SCH quantum-well lasers with wire-like active region by using p-type substrates

IEEE Photonics Technology Letters ◽

10.1109/68.157116 ◽

1992 ◽

Vol 4 (9) ◽

pp. 964-966 ◽

Cited By ~ 4

Author(s):

Y. Miyake ◽

H. Hirayama ◽

J.I. Shim ◽

S. Arai ◽

Y. Miyamoto

Keyword(s):

Active Region ◽

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Current Reduction ◽

P Type

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