Measurement of the barrier height of a multiple quantum barrier (MQB)

1994 ◽  
Vol 30 (12) ◽  
pp. 2781-2789 ◽  
Author(s):  
J. Rennie ◽  
M. Okajima ◽  
K. Itaya ◽  
G. Hatakoshi
Keyword(s):  
Barrier Height ◽  
Multiple Quantum

Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width

1986 ◽  
Vol 48 (19) ◽  
pp. 1261-1263 ◽  
Author(s):  
P. Parayanthal ◽  
H. Shen ◽  
Fred H. Pollak ◽  
O. J. Glembocki ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Barrier Height ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

1998 ◽  
Vol 10 (10) ◽  
pp. 1380-1382 ◽  
Author(s):  
M.J. Hamp ◽  
D.T. Cassidy ◽  
B.J. Robinson ◽  
Q.C. Zhao ◽  
D.A. Thompson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Barrier Height ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Carrier Distribution

Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells

2019 ◽  
Author(s):  
Saulius Marcinkevičius ◽  
Rintat Yapparov ◽  
Leah Y. Kuritzky ◽  
Shuji Nakamura ◽  
James S. Speck
Keyword(s):  
Quantum Wells ◽  
Barrier Height ◽  
Carrier Transport ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1840
Author(s):  
Alessandro Caria ◽  
Carlo De Santi ◽  
Ezgi Dogmus ◽  
Farid Medjdoub ◽  
Enrico Zanoni ◽  
...  
Keyword(s):  
Barrier Height ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Excitation Intensity ◽  
Multiple Quantum ◽  
High Excitation ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Increasing Temperature ◽  
Carrier Escape

In this article, we investigate the behavior of InGaN–GaN Multiple Quantum Well (MQW) photodetectors under different excitation density (616 µW/cm2 to 7.02 W/cm2) and temperature conditions (from 25 °C to 65 °C), relating the experimental results to carrier recombination/escape dynamics. We analyzed the optical-to-electrical power conversion efficiency of the devices as a function of excitation intensity and temperature, demonstrating that: (a) at low excitation densities, there is a lowering in the optical-to-electrical conversion efficiency and in the short-circuit current with increasing temperature; (b) the same quantities increase with increasing temperature when using high excitation power. Moreover, (c) we observed an increase in the signal of photocurrent measurements at sub-bandgap excitation wavelengths with increasing temperature. The observed behavior is explained by considering the interplay between Shockley–Read–Hall (SRH) recombination and carrier escape. The first mechanism is relevant at low excitation densities and increases with temperature, thus lowering the efficiency; the latter is important at high excitation densities, when the effective barrier height is reduced. We developed a model for reproducing the variation of JSC with temperature; through this model, we calculated the effective barrier height for carrier escape, and demonstrated a lowering of this barrier with increasing temperature, that can explain the increase in short-circuit current at high excitation densities. In addition, we extracted the energy position of the defects responsible for SRH recombination, which are located 0.33 eV far from midgap.

Characterisation of multilayer materials using a position-sensitive atom probe

1990 ◽  
Vol 48 (4) ◽  
pp. 624-625
Author(s):  
RAD Mackenzie ◽  
G D W Smith ◽  
A. Cerezo ◽  
J A Liddle ◽  
CRM Grovenor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spatial Information ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Organic Chemical ◽  
Growth Stages ◽  
Multiple Quantum ◽  
Quartz Wool ◽  
Position Sensitive

The position sensitive atom probe (POSAP), described briefly elsewhere in these proceedings, permits both chemical and spatial information in three dimensions to be recorded from a small volume of material. This technique is particularly applicable to situations where there are fine scale variations in composition present in the material under investigation. We report the application of the POSAP to the characterisation of semiconductor multiple quantum wells and metallic multilayers.The application of devices prepared from quantum well materials depends on the ability to accurately control both the quantum well composition and the quality of the interfaces between the well and barrier layers. A series of metal organic chemical vapour deposition (MOCVD) grown GaInAs-InP quantum wells were examined after being prepared under three different growth conditions. These samples were observed using the POSAP in order to study both the composition of the wells and the interface morphology. The first set of wells examined were prepared in a conventional reactor to which a quartz wool baffle had been added to promote gas intermixing. The effect of this was to hold a volume of gas within the chamber between growth stages, leading to a structure where the wells had a composition of GalnAsP lattice matched to the InP barriers, and where the interfaces were very indistinct. A POSAP image showing a well in this sample is shown in figure 1. The second set of wells were grown in the same reactor but with the quartz wool baffle removed. This set of wells were much better defined, as can be seen in figure 2, and the wells were much closer to the intended composition, but still with measurable levels of phosphorus. The final set of wells examined were prepared in a reactor where the design had the effect of minimizing the recirculating volume of gas. In this case there was again further improvement in the well quality. It also appears that the left hand side of the well in figure 2 is more abrupt than the right hand side, indicating that the switchover at this interface from barrier to well growth is more abrupt than the switchover at the other interface.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole
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