Theoretical study on optimum barrier height of GaAs/AlxGa1−xAs multiple quantum well modulator: Inhomogeneous broadening effects

1993 ◽  
Vol 74 (6) ◽  
pp. 3692-3697
Author(s):  
Kyu Nam Lim ◽  
Songcheol Hong ◽  
Jasprit Singh
Keyword(s):  
Quantum Well ◽  
Barrier Height ◽  
Theoretical Study ◽  
Multiple Quantum Well ◽  
Inhomogeneous Broadening ◽  
Multiple Quantum

Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

1998 ◽  
Vol 10 (10) ◽  
pp. 1380-1382 ◽  
Author(s):  
M.J. Hamp ◽  
D.T. Cassidy ◽  
B.J. Robinson ◽  
Q.C. Zhao ◽  
D.A. Thompson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Barrier Height ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Carrier Distribution

Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures

2003 ◽  
Vol 798 ◽  
Author(s):  
Madalina Furis ◽  
Alexander N. Cartwright ◽  
Hong Wu ◽  
William J. Schaff
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Well ◽  
Activation Energies ◽  
Inhomogeneous Broadening ◽  
Binding Energies ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Donor And Acceptor

ABSTRACTThe need for efficient UV emitting semiconductor sources has prompted the study of a number of heterostructures of III-N materials. In this work, the temperature dependence of the photoluminescence (PL) properties of UV-emitting GaN/AlN multiple quantum well (MQW) heterostructures were investigated in detail. In all samples studied, the structure consisted of 20 GaN quantum wells, with well widths varying between 7 and 15 Å, clad by 6nm AlN barriers, grown on top of a thick AlN buffer that was deposited on sapphire by molecular beam epitaxy. The observed energy corresponding to the peak of the emission spectrum is in agreement with a model that includes the strong confinement present in these structures and the existence of the large built-in piezoelectric field and spontaneous polarization present inside the wells. The observed emission varies from 3.5 eV (15 Å well) to 4.4 eV (7 Å well). Two activation energies associated with the photoluminescence quenching are extracted from the temperature dependence of the time-integrated PL intensity. These activation energies are consistent with donor and acceptor binding energies and the PL is dominated by recombination involving carriers localized on donor and/or acceptor states.Moreover, the temperature dependence of the full width at half-maximum (FWHM) of the PL feature indicates that inhomogeneous broadening dominates the spectrum at all temperatures. For the 15 and 13 Å wells, we estimate that the electron-phonon interaction is responsible for less than 30% of the broadening at room temperature. This broadening is negligible in the 9 Å wells over the entire temperature range studied. Well width fluctuations are primarily responsible for the inhomogeneous broadening, estimated to be of the order of 250meV for one monolayer fluctuation in well width.

PHOTOLUMINESCENCE OF NEAR-BRAGG MULTIPLE QUANTUM-WELL STRUCTURES

2007 ◽  
Vol 06 (05) ◽  
pp. 349-352 ◽  
Author(s):  
M. M. VORONOV ◽  
E. L. IVCHENKO
Keyword(s):  
Green Function ◽  
Photonic Crystals ◽  
Quantum Well ◽  
Theoretical Study ◽  
Multiple Quantum Well ◽  
Spectral Intensity ◽  
Multiple Quantum ◽  
Dielectric Polarization ◽  
Quantum Well Structures ◽  
One Dimensional

We report on a theoretical study of photoluminescence (PL) of the resonant one-dimensional photonic crystals, the near-Bragg quantum-well (QW) structures. The PL spectral intensity is found by including random sources in the equations for the exciton dielectric polarization and introducing the discrete Green function. The position and the width of peaks in the calculated PL spectra are in agreement with the real and imaginary parts of the exciton-polariton eigenfrequencies.

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