Polarization dependence of photo-detection in strained multiple quantum-well semiconductor lasers

1995 ◽  
Vol 31 (2) ◽  
pp. 286-292 ◽  
Author(s):  
T. Higashi ◽  
T. Ikeda ◽  
S. Ogita ◽  
K. Morito ◽  
H. Soda
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Multiple Quantum Well ◽  
Polarization Dependence ◽  
Multiple Quantum ◽  
Photo Detection

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers

1999 ◽  
Vol 38 (Part 1, No. 6A) ◽  
pp. 3530-3534
Author(s):  
Mitsuaki Shimizu ◽  
Yoshihiro Suzuki ◽  
Seiji Mukai ◽  
Masanobu Watanabe ◽  
Toshifumi Hasama
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Leakage Current ◽  
Pulse Width ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Dependence of emission wavelength on cavity length and facet reflectivities in multiple quantum well semiconductor lasers

1989 ◽  
Vol 54 (22) ◽  
pp. 2174-2176 ◽  
Author(s):  
J. Z. Wilcox ◽  
S. Ou ◽  
J. J. Yang ◽  
M. Jansen ◽  
G. L. Peterson
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Emission Wavelength ◽  
Multiple Quantum

scholarly journals Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate

2020 ◽  
Vol 28 (23) ◽  
pp. 34772
Author(s):  
Hao Zhou ◽  
Shengqiang Xu ◽  
Shaoteng Wu ◽  
Yi-Chiau Huang ◽  
Peng Zhao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Photo Detection
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