Pseudomorphic GeSn/Ge Multiple-quantum-well on Silicon for Photo Detection and Modulation at 2 µm Wavelength Range

2019 ◽  
Author(s):  
Shengqiang Xu ◽  
Wei Wang ◽  
Yuan Dong ◽  
Yi-Chiau Huang ◽  
Saeid Masudy-Panah ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Photo Detection

scholarly journals Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate

2020 ◽  
Vol 28 (23) ◽  
pp. 34772
Author(s):  
Hao Zhou ◽  
Shengqiang Xu ◽  
Shaoteng Wu ◽  
Yi-Chiau Huang ◽  
Peng Zhao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Photo Detection

InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range

1990 ◽  
Vol 57 (6) ◽  
pp. 548-550 ◽  
Author(s):  
T. K. Woodward ◽  
Theodore Sizer ◽  
D. L. Sivco ◽  
A. Y. Cho
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators

scholarly journals High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate

2019 ◽  
Vol 27 (4) ◽  
pp. 5798 ◽  
Author(s):  
Shengqiang Xu ◽  
Wei Wang ◽  
Yi-Chiau Huang ◽  
Yuan Dong ◽  
Saeid Masudy-Panah ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Photo Detection

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation
Sign in / Sign up

Export Citation Format

Share Document