A carrier injection type optical switch in GaAs using free carrier plasma dispersion with wavelength range from 1.06 to 1.55 mu m

1989 ◽  
Vol 25 (7) ◽  
pp. 1677-1681 ◽  
Author(s):  
F. Ito ◽  
M. Matsuura ◽  
T. Tanifuji
Keyword(s):  
Wavelength Range ◽  
Optical Switch ◽  
Free Carrier ◽  
Carrier Injection ◽  
Injection Type ◽  
Plasma Dispersion

InP-BASED OPTICAL SWITCH ARRAYS USING SEMICONDUCTOR OPTICAL AMPLIFIERS

1996 ◽  
Vol 07 (01) ◽  
pp. 85-124
Author(s):  
TOSHIO KIRIHARA ◽  
HIROAKI INOUE
Keyword(s):  
Spontaneous Emission ◽  
Large Scale ◽  
Optical Amplifiers ◽  
Optical Switch ◽  
Semiconductor Optical Amplifiers ◽  
Carrier Injection ◽  
Photonic Switching ◽  
Integration Techniques ◽  
Injection Type ◽  
Switching Characteristics

We present a review of optical switch arrays using semiconductor optical amplifiers. The combination of active and passive switching components and of gate and booster amplifiers is discussed from the viewpoint of the relation between their designs and switching characteristics: loss compensation, crosstalk, spontaneous emission noise, and gain saturation. Demonstrations of carrier-injection type single-slip structure ( S 3) switch with traveling amplifier (COSTA) were reviewed to illustrate the device integration techniques and their potential usefulness in large-scale photonic switching systems even in the presence of spontaneous emission from integrated optical amplifiers.

Carrier injection type optical switch using oxygen ion implantation as carrier confinement

1994 ◽  
Author(s):  
Ji-Ning Duan ◽  
Wanru Zhuang ◽  
Peisheng Yang ◽  
Zhiwen Shi ◽  
Furong Sun ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Switch ◽  
Carrier Injection ◽  
Carrier Confinement ◽  
Oxygen Ion ◽  
Injection Type ◽  
Oxygen Ion Implantation

Amplitude and phase modulation by free-carrier injection in III–V semiconducting waveguides for the 106-μm wavelength

1987 ◽  
Vol 12 (11) ◽  
pp. 950 ◽  
Author(s):  
D. Delacourt ◽  
R. Blondeau ◽  
C. Brylinski ◽  
M. A. di Forte-Poisson ◽  
N. Herschkorn ◽  
...  
Keyword(s):  
Phase Modulation ◽  
Free Carrier ◽  
Carrier Injection

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

Design and Fabrication of Three-terminal Carrier-injection-type Si-LED with Standard CMOS Technology

2012 ◽  
Vol 33 (4) ◽  
pp. 444-448
Author(s):  
韩磊 HAN Lei ◽  
张世林 ZHANG Shi-lin ◽  
郭维廉 GUO Wei-lian ◽  
毛陆虹 MAO Lu-hong ◽  
谢生 XIE Sheng ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Carrier Injection ◽  
Injection Type

A numerical method for solving the physics-based model of IGBT with all free-carrier injection conditions in the base region

2017 ◽  
Vol 36 (6) ◽  
pp. 1653-1662 ◽  
Author(s):  
Jiajia Chen ◽  
Yuhan Ma ◽  
Shiyou Yang
Keyword(s):  
Mathematical Model ◽  
Numerical Model ◽  
Design Methodology ◽  
Free Carrier ◽  
Carrier Injection ◽  
Base Region ◽  
Content Type ◽  
Insulated Gate Bipolar Transistor ◽  
Proposed Model ◽  
Solution Methodology

Purpose The purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition. Design/methodology/approach A numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed. Findings The results of the proposed model are very close to the tested ones. Originality/value A mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.

Performance of the Active Microring Resonator Based on SOI Rib Waveguide

2012 ◽  
Vol 462 ◽  
pp. 375-379
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  
Keyword(s):  
Refractive Index ◽  
Ring Resonator ◽  
Refractive Index Change ◽  
Electrical Signal ◽  
Free Carrier ◽  
Simulation Software ◽  
Microring Resonator ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Rib Waveguide

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

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