Amplitude and phase modulation by free-carrier injection in III–V semiconducting waveguides for the 106-μm wavelength

1987 ◽  
Vol 12 (11) ◽  
pp. 950 ◽  
Author(s):  
D. Delacourt ◽  
R. Blondeau ◽  
C. Brylinski ◽  
M. A. di Forte-Poisson ◽  
N. Herschkorn ◽  
...  
Keyword(s):  
Phase Modulation ◽  
Free Carrier ◽  
Carrier Injection

Phase Modulation Optimization of Optical Modulator Based on Free Carrier Injection Effect

2013 ◽  
Vol 19 (5) ◽  
pp. 1471-1474
Author(s):  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P. S. Menon ◽  
H Hazura ◽  
A. R. Hanim ◽  
...  
Keyword(s):  
Phase Modulation ◽  
Free Carrier ◽  
Optical Modulator ◽  
Carrier Injection ◽  
Injection Effect

A numerical method for solving the physics-based model of IGBT with all free-carrier injection conditions in the base region

2017 ◽  
Vol 36 (6) ◽  
pp. 1653-1662 ◽  
Author(s):  
Jiajia Chen ◽  
Yuhan Ma ◽  
Shiyou Yang
Keyword(s):  
Mathematical Model ◽  
Numerical Model ◽  
Design Methodology ◽  
Free Carrier ◽  
Carrier Injection ◽  
Base Region ◽  
Content Type ◽  
Insulated Gate Bipolar Transistor ◽  
Proposed Model ◽  
Solution Methodology

Purpose The purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition. Design/methodology/approach A numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed. Findings The results of the proposed model are very close to the tested ones. Originality/value A mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.

Performance of the Active Microring Resonator Based on SOI Rib Waveguide

2012 ◽  
Vol 462 ◽  
pp. 375-379
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  
Keyword(s):  
Refractive Index ◽  
Ring Resonator ◽  
Refractive Index Change ◽  
Electrical Signal ◽  
Free Carrier ◽  
Simulation Software ◽  
Microring Resonator ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Rib Waveguide

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

Analysis of Silicon-On-Insulator (SOI) Buried Waveguide Phase Modulator

2012 ◽  
Vol 462 ◽  
pp. 532-535
Author(s):  
Abdul Razak Hanim ◽  
Haroon Hazura ◽  
Bidin Mardiana ◽  
Shaari Sahbudin ◽  
P. Susthitha Menon
Keyword(s):  
Refractive Index ◽  
Single Mode ◽  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Carrier Injection ◽  
Dispersion Effect ◽  
Optical Phase ◽  
Real Refractive Index ◽  
Simulation Package

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VπLπ is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.

scholarly journals Efficiency of spin injection in novel InAs quantum dot structures: exciton vs. free carrier injection

2010 ◽  
Vol 245 ◽  
pp. 012044 ◽  
Author(s):  
J Beyer ◽  
I A Buyanova ◽  
S Suraprapapich ◽  
C W Tu ◽  
W M Chen
Keyword(s):  
Quantum Dot ◽  
Spin Injection ◽  
Free Carrier ◽  
Carrier Injection ◽  
Inas Quantum Dot

scholarly journals Silicon-on-insulator free-carrier injection modulators for the mid-infrared

2019 ◽  
Vol 44 (4) ◽  
pp. 915 ◽  
Author(s):  
M. Nedeljkovic ◽  
C. G. Littlejohns ◽  
A. Z. Khokhar ◽  
M. Banakar ◽  
W. Cao ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Mid Infrared
Sign in / Sign up

Export Citation Format

Share Document