Carrier‐injection‐type optical switch in GaAs with a 1.06–1.55 μm wavelength range

1989 ◽  
Vol 54 (2) ◽  
pp. 134-136 ◽  
Author(s):  
Fumihiko Ito ◽  
Tadatoshi Tanifuji
1996 ◽  
Vol 07 (01) ◽  
pp. 85-124
Author(s):  
TOSHIO KIRIHARA ◽  
HIROAKI INOUE

We present a review of optical switch arrays using semiconductor optical amplifiers. The combination of active and passive switching components and of gate and booster amplifiers is discussed from the viewpoint of the relation between their designs and switching characteristics: loss compensation, crosstalk, spontaneous emission noise, and gain saturation. Demonstrations of carrier-injection type single-slip structure ( S 3) switch with traveling amplifier (COSTA) were reviewed to illustrate the device integration techniques and their potential usefulness in large-scale photonic switching systems even in the presence of spontaneous emission from integrated optical amplifiers.


1994 ◽  
Author(s):  
Ji-Ning Duan ◽  
Wanru Zhuang ◽  
Peisheng Yang ◽  
Zhiwen Shi ◽  
Furong Sun ◽  
...  

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.


2012 ◽  
Vol 33 (4) ◽  
pp. 444-448
Author(s):  
韩磊 HAN Lei ◽  
张世林 ZHANG Shi-lin ◽  
郭维廉 GUO Wei-lian ◽  
毛陆虹 MAO Lu-hong ◽  
谢生 XIE Sheng ◽  
...  

2004 ◽  
Vol 16 (4) ◽  
pp. 1038-1040 ◽  
Author(s):  
S. Abdalla ◽  
S. Ng ◽  
P. Barrios ◽  
D. Celo ◽  
A. Delage ◽  
...  

1990 ◽  
Vol 2 (3) ◽  
pp. 214-215 ◽  
Author(s):  
H. Inoue ◽  
T. Kirihara ◽  
Y. Sasaki ◽  
K. Ishida

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