Current confinement and leakage currents in planar buried-ridge-structure laser diodes on n-substrate

1989 ◽  
Vol 25 (7) ◽  
pp. 1595-1602 ◽  
Author(s):  
M.-C. Amann ◽  
W. Thulke
Keyword(s):  
Laser Diodes ◽  
Leakage Currents ◽  
Ridge Structure ◽  
Current Confinement ◽  
Structure Laser

Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

1988 ◽  
Vol 24 (10) ◽  
pp. 609-611 ◽  
Author(s):  
A. Talneau ◽  
D. Rondi ◽  
M. Krakowski ◽  
R. Blondeau
Keyword(s):  
Laser Diodes ◽  
Ridge Structure ◽  
Low Threshold ◽  
Structure Laser

Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 mu m GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

1989 ◽  
Vol 25 (6) ◽  
pp. 1346-1352 ◽  
Author(s):  
M. Krakowski ◽  
D. Rondi ◽  
A. Talneau ◽  
Y. Combemale ◽  
G. Chevalier ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Low Noise ◽  
Ridge Structure ◽  
High Bandwidth ◽  
Low Threshold ◽  
Structure Laser

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

1996 ◽  
Vol 69 (11) ◽  
pp. 1568-1570 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin‐ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Lifetime ◽  
Laser Diodes ◽  
Optical Gain ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes

1997 ◽  
Vol 70 (5) ◽  
pp. 616-618 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Ultrashort Pulse ◽  
Laser Diodes ◽  
Longitudinal Mode ◽  
Pulse Generation ◽  
Ultrashort Pulse Generation ◽  
Structure Laser ◽  
Multiquantum Well

InGaN/GaN/AiGaN-Based Laser Diodes with an Estimated Lifetime of Longer than 10,000 Hours

1997 ◽  
Vol 482 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
Optical Feedback ◽  
Laser Diodes ◽  
Continuous Wave Operation ◽  
Operating Current ◽  
Strained Layer Superlattice ◽  
Cladding Layers ◽  
Multi Quantum Well ◽  
Structure Laser

AbstractInGaN multi-quantum-well (MQW) structure laser diodes with A10.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10,000 hours under continuous-wave operation at 20°C. Under operation at a high temperature of 50°C, the lifetime was longer than 1,000 hours. The activation energy of the lifetime was estimated to be 0.5 eV. With the operating current increasing above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The relative intensity noise (RIN) less than -145 dB/Hz was obtained even at the 6% optical feedback using the high-frequency modulation of 600 MHz. The threshold carrier density of the InGaN MQW-structure LDs was estimated to be 3 × 1019/cm3 using a carrier lifetime of 1.8 ns.

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 36 (Part 2, No. 8B) ◽  
pp. L1059-L1061 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Long Lifetime ◽  
Multi Quantum Well ◽  
Structure Laser

ZnSe-Based Laser Diodes on p-GaAs with Current Confinement by Nitrogen Ion Bombardment

1993 ◽  
Author(s):  
Shigeo HAYASHI ◽  
Kazuhiro OHKAWA ◽  
Ayumu TSUJIMURA ◽  
Shigeo YOSHII ◽  
Hidemi TAKEISHI ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Ion Bombardment ◽  
Current Confinement ◽  
Nitrogen Ion
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