Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 mu m GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

1989 ◽  
Vol 25 (6) ◽  
pp. 1346-1352 ◽  
Author(s):  
M. Krakowski ◽  
D. Rondi ◽  
A. Talneau ◽  
Y. Combemale ◽  
G. Chevalier ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Low Noise ◽  
Ridge Structure ◽  
High Bandwidth ◽  
Low Threshold ◽  
Structure Laser

Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

1988 ◽  
Vol 24 (10) ◽  
pp. 609-611 ◽  
Author(s):  
A. Talneau ◽  
D. Rondi ◽  
M. Krakowski ◽  
R. Blondeau
Keyword(s):  
Laser Diodes ◽  
Ridge Structure ◽  
Low Threshold ◽  
Structure Laser

Plasma-hydrogenated low-threshold wide-band 1.3 μm buried ridge structure laser

1989 ◽  
Vol 25 (21) ◽  
pp. 1433 ◽  
Author(s):  
C. Kazmierski ◽  
B. Theys ◽  
B. Rose ◽  
A. Mircea ◽  
A. Jalil ◽  
...  
Keyword(s):  
Wide Band ◽  
Ridge Structure ◽  
Low Threshold ◽  
Structure Laser

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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