Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (/spl lambda/=0.98 /spl mu/m)

2000 ◽  
Vol 6 (4) ◽  
pp. 577-584 ◽  
Author(s):  
G.W. Yang ◽  
R.J. Hwu ◽  
Z.T. Xu ◽  
X.Y. Ma
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Design Consideration ◽  
High Brightness ◽  
And Performance

High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm

2002 ◽  
Author(s):  
Marc T. Kelemen ◽  
Franz Rinner ◽  
Joseph Rogg ◽  
Nicolas Wiedmann ◽  
Rudolf Kiefer ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Ridge Waveguide ◽  
High Brightness

Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05 μm

1998 ◽  
Author(s):  
Hong K. Choi ◽  
George W. Turner ◽  
James N. Walpole ◽  
M. J. Manfra ◽  
M. K. Connors ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
High Brightness ◽  
Low Threshold

MBE growth of high-power quantum-well diode lasers emitting at 3.5 μm

1997 ◽  
Vol 175-176 ◽  
pp. 825-832 ◽  
Author(s):  
G.W. Turner ◽  
M.J. Manfra ◽  
H.K. Choi ◽  
M.K. Connors
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Mbe Growth

Effect of facet reflectivities on high-power highly strained InGaAs quantum-well diode lasers operating at 1.2 μm

2006 ◽  
Author(s):  
C. J. Panchal ◽  
V. A. Kheraj ◽  
K. M. Patel ◽  
P. K. Patel ◽  
B. M. Arora ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Highly Strained ◽  
Ingaas Quantum Well

High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 μm

1998 ◽  
Author(s):  
Raymond J. Menna ◽  
Dmitri Z. Garbuzov ◽  
Hao Lee ◽  
Ramon U. Martinelli ◽  
S. Yegna Narayan ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers

High‐power conversion efficiency quantum well diode lasers

1987 ◽  
Vol 51 (17) ◽  
pp. 1318-1319 ◽  
Author(s):  
R. G. Waters ◽  
D. K. Wagner ◽  
D. S. Hill ◽  
P. L. Tihanyi ◽  
B. J. Vollmer
Keyword(s):  
Quantum Well ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
High Power ◽  
Diode Lasers ◽  
Power Conversion ◽  
High Power Conversion Efficiency

Super-high-power operation of 0.98-μm InGaAs(P)/InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers

1999 ◽  
Author(s):  
Dmitri Z. Garbuzov ◽  
Mikhail A. Maiorov ◽  
V. Khalfin ◽  
Maria G. Harvey ◽  
A. Al-Muhanna ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
High Power Operation ◽  
Power Operation

High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers

1991 ◽  
Vol 3 (10) ◽  
pp. 857-859 ◽  
Author(s):  
H.K. Choi ◽  
C.A. Wang ◽  
D.F. Kolesar ◽  
R.L. Aggarwal ◽  
J.N. Walpole
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Temperature Operation
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