Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05 μm

1998 ◽  
Author(s):  
Hong K. Choi ◽  
George W. Turner ◽  
James N. Walpole ◽  
M. J. Manfra ◽  
M. K. Connors ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
High Brightness ◽  
Low Threshold

High‐power low‐threshold graded‐index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

1989 ◽  
Vol 55 (15) ◽  
pp. 1492-1494 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
Robert J. Lang ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Authi A. Narayanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Graded Index ◽  
Si Substrates ◽  
Low Threshold

High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

2013 ◽  
Vol 34 (11) ◽  
pp. 114011 ◽  
Author(s):  
Zhen Dong ◽  
Cuiluan Wang ◽  
Hongqi Jing ◽  
Suping Liu ◽  
Xiaoyu Ma
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Single Mode ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Low Threshold

High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Strained Layer
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