Effect of facet reflectivities on high-power highly strained InGaAs quantum-well diode lasers operating at 1.2 μm

2006 ◽  
Author(s):  
C. J. Panchal ◽  
V. A. Kheraj ◽  
K. M. Patel ◽  
P. K. Patel ◽  
B. M. Arora ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Highly Strained ◽  
Ingaas Quantum Well

High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm

2002 ◽  
Vol 14 (7) ◽  
pp. 887-889 ◽  
Author(s):  
T.K. Sharma ◽  
M. Zorn ◽  
F. Bugge ◽  
R. Hulsewede ◽  
G. Erbert ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Highly Strained ◽  
Ingaas Quantum Well

Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

2011 ◽  
Vol 45 (9) ◽  
pp. 1227-1230 ◽  
Author(s):  
D. A. Vinokurov ◽  
D. N. Nikolaev ◽  
N. A. Pikhtin ◽  
A. L. Stankevich ◽  
V. V. Shamakhov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Diode Lasers ◽  
Highly Strained

MBE growth of high-power quantum-well diode lasers emitting at 3.5 μm

1997 ◽  
Vol 175-176 ◽  
pp. 825-832 ◽  
Author(s):  
G.W. Turner ◽  
M.J. Manfra ◽  
H.K. Choi ◽  
M.K. Connors
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Mbe Growth

High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 μm

1998 ◽  
Author(s):  
Raymond J. Menna ◽  
Dmitri Z. Garbuzov ◽  
Hao Lee ◽  
Ramon U. Martinelli ◽  
S. Yegna Narayan ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers

High‐power conversion efficiency quantum well diode lasers

1987 ◽  
Vol 51 (17) ◽  
pp. 1318-1319 ◽  
Author(s):  
R. G. Waters ◽  
D. K. Wagner ◽  
D. S. Hill ◽  
P. L. Tihanyi ◽  
B. J. Vollmer
Keyword(s):  
Quantum Well ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
High Power ◽  
Diode Lasers ◽  
Power Conversion ◽  
High Power Conversion Efficiency
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